State space collapse and diffusion approximation for a network operating under a fair bandwidth sharing policy

We consider a connection-level model of Internet congestion control, introduced by Massouli\'{e} and Roberts [Telecommunication Systems 15 (2000) 185--201], that represents the randomly varying number of flows present in a network. Here, bandwidth is shared fairly among elastic document transfers according to a weighted $\alpha$-fair bandwidth sharing policy introduced by Mo and Walrand [IEEE/ACM Transactions on Networking 8 (2000) 556--567] [$\alpha\in (0,\infty)$]. Assuming Poisson arrivals and exponentially distributed document sizes, we focus on the heavy traffic regime in which the average load placed on each resource is approximately equal to its capacity. A fluid model (or functional law of large numbers approximation) for this stochastic model was derived and analyzed in a prior work [Ann. Appl. Probab. 14 (2004) 1055--1083] by two of the authors. Here, we use the long-time behavior of the solutions of the fluid model established in that paper to derive a property called multiplicative state space collapse, which, loosely speaking, shows that in diffusion scale, the flow count process for the stochastic model can be approximately recovered as a continuous lifting of the workload process.Comment: Published in at http://dx.doi.org/10.1214/08-AAP591 the Annals of Applied Probability (http://www.imstat.org/aap/) by the Institute of Mathematical Statistics (http://www.imstat.org

Study of 0-π\pi phase transition in hybrid superconductor-InSb nanowire quantum dot devices

Hybrid superconductor-semiconducting nanowire devices provide an ideal platform to investigating novel intragap bound states, such as the Andreev bound states (ABSs), Yu-Shiba-Rusinov (YSR) states, and the Majorana bound states. The competition between Kondo correlations and superconductivity in Josephson quantum dot (QD) devices results in two different ground states and the occurrence of a 0-$\pi$ quantum phase transition. Here we report on transport measurements on hybrid superconductor-InSb nanowire QD devices with different device geometries. We demonstrate a realization of continuous gate-tunable ABSs with both 0-type levels and $\pi$-type levels. This allow us to manipulate the transition between 0 and $\pi$ junction and explore charge transport and spectrum in the vicinity of the quantum phase transition regime. Furthermore, we find a coexistence of 0-type ABS and $\pi$-type ABS in the same charge state. By measuring temperature and magnetic field evolution of the ABSs, the different natures of the two sets of ABSs are verified, being consistent with the scenario of phase transition between the singlet and doublet ground state. Our study provides insights into Andreev transport properties of hybrid superconductor-QD devices and sheds light on the crossover behavior of the subgap spectrum in the vicinity of 0-$\pi$ transition

A novel element upstream of the Vgamma2 gene in the murine T cell receptor gamma locus cooperates with the 3 enhancer to act as a locus control region.

Transgenic expression constructs were employed to identify a cis-acting transcription element in the T cell receptor (TCR)-gamma locus, called HsA, between the Vgamma5 and Vgamma2 genes. In constructs lacking the previously defined enhancer (3E(Cgamma1)), HsA supports transcription in mature but not immature T cells in a largely position-independent fashion. 3E(Cgamma1), without HsA, supports transcription in immature and mature T cells but is subject to severe position effects. Together, the two elements support expression in immature and mature T cells in a copy number-dependent, position-independent fashion. Furthermore, HsA was necessary for consistent rearrangement of transgenic recombination substrates. These data suggest that HsA provides chromatin-opening activity and, together with 3E(Cgamma1), constitutes a T cell-specific locus control region for the TCR-gamma locus

Modulation of the Curie Temperature in Ferromagnetic/Ferroelectric Hybrid Double Quantum Wells

We propose a ferromagnetic/ferroelectric hybrid double quantum well structure, and present an investigation of the Curie temperature (Tc) modulation in this quantum structure. The combined effects of applied electric fields and spontaneous electric polarization are considered for a system that consists of a Mn \delta-doped well, a barrier, and a p-type ferroelectric well. We calculate the change in the envelope functions of carriers at the lowest energy sub-band, resulting from applied electric fields and switching the dipole polarization. By reversing the depolarizing field, we can achieve two different ferromagnetic transition temperatures of the ferromagnetic quantum well in a fixed applied electric field. The Curie temperature strongly depends on the position of the Mn \delta-doped layer and the polarization strength of the ferroelectric well.Comment: 9 pages, 5 figures, to be published in Phys. Rev. B (2006) minor revision: One of the line types is changed in Fig.

Schottky barrier and contact resistance of InSb nanowire field effect transistors

Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, to individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height $\Phi_{\rm{SB}}\sim20\ \rm{meV}$ is present at the metal-InSb NW interfaces and its effective height is gate tunable. The contact resistance ($R_{\rm{c}}$) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that $R_{\rm{c}}$ at on-state exhibits a pronounced magnetic field dependent feature, namely it is increased strongly with increasing magnetic field after an onset field $B_{\rm{c}}$. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide a solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW based nanoelectronic devices and quantum devices.Comment: 12 pages, 4 figure

Gender Differences in Response to a School-Based Mindfulness Training Intervention for Early Adolescents

Mindfulness training has been used to improve emotional wellbeing in early adolescents. However, little is known about treatment outcome moderators, or individual differences that may differentially impact responses to treatment. The current study focused on gender as a potential moderator for affective outcomes in response to school-based mindfulness training. Sixth grade students (N = 100) were randomly assigned to either the six weeks of mindfulness meditation or the active control group as part of a history class curriculum. Participants in the mindfulness meditation group completed short mindfulness meditation sessions four to five times per week, in addition to didactic instruction (Asian history). The control group received matched experiential activity in addition to didactic instruction (African history) from the same teacher with no meditation component. Self-reported measures of emotional wellbeing/affect, mindfulness, and self-compassion were obtained at pre and post intervention. Meditators reported greater improvement in emotional wellbeing compared to those in the control group. Importantly, gender differences were detected, such that female meditators reported greater increases in positive affect compared to females in the control group, whereas male meditators and control males displayed equivalent gains. Uniquely among females but not males, increases in self-reported self-compassion were associated with improvements in affect. These findings support the efficacy of school-based mindfulness interventions, and interventions tailored to accommodate distinct developmental needs of female and male adolescents

High current-carrying capability in c-axis-oriented superconducting MgB2 thin films

In high-quality c-axis-oriented MgB2 thin films, we observed high critical current densities (Jc) of 16 MA/cm^2 at 15 K under self fields comparable to those of cuprate high-temperature superconductors. The extrapolated value of Jc at 5 K was estimated to be 40 MA/cm^2. For a magnetic field of 5 T, a Jc of 0.1 MA/cm^2 was detected at 15 K, suggesting that this compound would be a very promising candidate for practical applications at high temperature and lower power consumption. The vortex-glass phase is considered to be a possible explanation for the observed high current-carrying capability.Comment: 3 pages and 4 figures, to be published in Physical Review Letter