7 research outputs found
Spin-orbit readout using thin films of topological insulator Sb2Te3 deposited by industrial magnetron sputtering
Driving a spin-logic circuit requires the production of a large output signal
by spin-charge interconversion in spin-orbit readout devices. This should be
possible by using topological insulators, which are known for their high
spin-charge interconversion efficiency. However, high-quality topological
insulators have so far only been obtained on a small scale, or with large scale
deposition techniques which are not compatible with conventional industrial
deposition processes. The nanopatterning and electrical spin injection into
these materials has also proven difficult due to their fragile structure and
low spin conductance. We present the fabrication of a spin-orbit readout device
from the topological insulator Sb2Te3 deposited by large-scale industrial
magnetron sputtering on SiO2. Despite a modification of the Sb2Te3 layer
structural properties during the device nanofabrication, we measured a sizeable
output voltage that can be unambiguously ascribed to a spin-charge
interconversion process
Electrical measurement of the spin Hall effect isotropy in ferromagnets with strong spin-orbit interactions
The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials, the magnetization breaks the rotational symmetry, and, thus, the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall effect anisotropy in ferromagnetic NiCu and NiPd. We show that the magnetization vector does not lead to a sizable anisotropy of the spin charge interconversion and spin transport parameters in materials with a spin-orbit coupling comparable to the exchange interaction
Electrical measurement of the Spin Hall Effect isotropy in a ferromagnet
The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall Effect anisotropy in NiCu and NiPd, both in their ferromagnetic and paramagnetic phases. We show that the appearance of the ferromagnetic order does not lead to a sizeable anisotropy of the spin charge interconversion in these materials
Electrical measurement of the Spin Hall Effect isotropy in a ferromagnet
The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall Effect anisotropy in NiCu and NiPd, both in their ferromagnetic and paramagnetic phases. We show that the appearance of the ferromagnetic order does not lead to a sizeable anisotropy of the spin charge interconversion in these materials
Electrical measurement of the Spin Hall Effect isotropy in a ferromagnet
The spin-dependent transport properties of paramagnetic metals are roughly
invariant under rotation. By contrast, in ferromagnetic materials the
magnetization breaks the rotational symmetry, and thus the spin Hall effect is
expected to become anisotropic. Here, using a specific design of lateral spin
valves, we measure electrically the spin Hall Effect anisotropy in NiCu and
NiPd, both in their ferromagnetic and paramagnetic phases. We show that the
appearance of the ferromagnetic order does not lead to a sizeable anisotropy of
the spin charge interconversion in these materials
Spin-orbit readout using thin films of topological insulator Sb2Te3 deposited by industrial magnetron sputtering
Driving a spin-logic circuit requires the production of a large output signal by spin-charge interconversion in spin-orbit readout devices. This should be possible by using topological insulators, which are known for their high spin-charge interconversion efficiency. However, high-quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniques which are not compatible with conventional industrial deposition processes. The nanopatterning and electrical spin injection into these materials has also proven difficult due to their fragile structure and low spin conductance. We present the fabrication of a spin-orbit readout device from the topological insulator Sb2Te3 deposited by large-scale industrial magnetron sputtering on SiO2. Despite a modification of the Sb2Te3 layer structural properties during the device nanofabrication, we measured a sizeable output voltage that can be unambiguously ascribed to a spin-charge interconversion process
Spin-orbit readout using thin films of topological insulator Sb2Te3 deposited by industrial magnetron sputtering
Driving a spin-logic circuit requires the production of a large output signal by spin-charge interconversion in spin-orbit readout devices. This should be possible by using topological insulators, which are known for their high spin-charge interconversion efficiency. However, high-quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniques which are not compatible with conventional industrial deposition processes. The nanopatterning and electrical spin injection into these materials has also proven difficult due to their fragile structure and low spin conductance. We present the fabrication of a spin-orbit readout device from the topological insulator Sb2Te3 deposited by large-scale industrial magnetron sputtering on SiO2. Despite a modification of the Sb2Te3 layer structural properties during the device nanofabrication, we measured a sizeable output voltage that can be unambiguously ascribed to a spin-charge interconversion process