Resonant States in the Electronic Structure of the High Performance Thermoelectrics AgPbmSbTe_{m}SbTe_{2+m}$ ; The Role of Ag-Sb Microstructures

Ab initio electronic structure calculations based on gradient corrected density functional theory were performed on a class of novel quaternary compounds AgPb$_{m}SbTe$_{2+m}$, which were found to be excellent high temperature thermoelctrics with large figure of merit ZT ~2.2 at 800K. We find that resonant states appear near the top of the valence and bottom of the conduction bands of bulk PbTe when Ag and Sb replace Pb. These states can be understood in terms of modified Te-Ag(Sb) bonds. Electronic structure near the gap depends sensitively on the microstructural arrangements of Ag-Sb atoms, suggesting that large ZT values may originate from the nature of these ordering arrangements.Comment: Accepted in Physical Review Letter

Single crystal growth and anisotropy of CeRuPO

We report on the single crystal growth of the ferromagnetic Kondo lattice system CeRuPO using a Sn flux method. Magnetic susceptibility and electrical resistivity measurements indicate strong anisotropy of this structurally layered compound. They evidence that the magnetic moments order ferromagnetically along the c-direction of the tetragonal unit cell, whereas the crystal electric field (CEF) anisotropy favors the ab-plane. Therefore, CeRuPO presents the unusual case within rare earth systems, where the anisotropy of the interionic exchange interaction overcomes the single ion anisotropy due to the CEF interaction.Comment: 13 pages, 7 figures, high quality figures: http://www.cpfs.mpg.de/~krellner

New Candidates for Topological Insulators : Pb-based chalcogenide series

Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pb$_n$Bi$_2$Se$_{n+3}$ and Pb$_n$Sb$_2$Te$_{n+3}$, are possible new candidates for topological insulators. As $n$ increases, the phase transition from a topological insulator to a band insulator is found to occur between $n=2$ and 3 for both series. Significantly, among the new topological insulators, we found a bulk band gap of 0.40eV in PbBi$_2$Se$_4$ which is one of the largest gap topological insulators, and that Pb$_2$Sb$_2$Te$_5$ is located in the immediate vicinity of the topological phase boundary, making its topological phase easily tunable by changing external parameters such as lattice constants. Due to the three-dimensional Dirac cone at the phase boundary, massless Dirac fermions also may be easily accessible in Pb$_2$Sb$_2$Te$_5$