Zinc oxide nanostructures: the effect of deposition parameters on the electrical properties using sol-gel method

Nanostructured Zinc Oxide (ZnO) has been deposited on Silicon Dioxide (Si02) using sol-gel method. The Si02 was grown on Silicon (Si) using dry oxidation process in 1 atrn ambient. In sol-gel method. a lot of deposition parameters need to be considered to remain the uniformity v and reproducibility. Any small changes in the deposition parameters will affect the surface morphologies, electrical properties and optical properties as well. This research is done to study the deposition parameters on the electrical properties and supported by the surface morphologies and optical properties which have strong correlation. There are four deposition method have been focused in this study which are the immerse time, Si02 thickness, annealing temperature and the precursor solution concentration. The results have been characterized using scanning electron microscope (SEM) for the structural properties, X-ray diffractometer (XRD) for the growth orientation and IV measurement system for the electrical properties. The optical properties have been characterized using photoluminescence and UV -VIS spectrometer. Immerse time at 3 hours shows optimum electrical IV response. The Si02 thickness when oxidized at 5 minutes has optimum structural, clectrical and optical propcl1ics. Annealing thc sample at 500°C has the optimum IV response but for the optical properties, the best annealing temperature is at 550°C. The precursor solution concentration at 0.0001 M has optimum IV response but for the optimum optical properties, 0.01 M has the best response. At the end of this study, the optimized deposition parameters in sol-gel method to deposit nanostrLlctured ZnO has been obtained. The result will be a contribution for the next researcher to study other parameters using sol-gel method

Influence of spinning speed on the properties of sol-gel spin coated ZnO films

In this work, ZnO films were fabricated by sol-gel spin coating technique. Different spinning speeds of 1000 to 6000 revolutions per minute (RPM) were used in order to study the changes on the properties of the ZnO films. The characterizations were conducted using surface profilometer for thickness measurement, atomic force microscopy (AFM) for surface scanning, X-ray diffractometer (XRD) for structural analysis, and ultraviolet-visible (UV-VIS) spectrophotometer for optical transmittance. The influence of spinning speed and the mechanisms which affect the growth of the ZnO films will be revealed

Direct current magnetron sputter-deposited ZnO thin films

Zinc oxide (ZnO) thin films were deposited on glass substrates at room temperature using direct current (DC) magnetron sputtering technique. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influence of the deposition pressure on structural properties of the ZnO films was investigated using atomic force microscopy (AFM). The optical properties of the ZnO films were measured using Ocean Optics spectrometer. The experimental results reveal that the deposition pressure has an important role in the structural and optical properties of the ZnO films

Zinc oxide films prepared by sol–gel spin coating technique

Zinc oxide (ZnO) thin films and micro- and nanostructures are very promising candidates for novel applications in emerging thin-film transistors, solar cells, sensors and optoelectronic devices. In this paper, a low-cost sol-gel spin coating technique was used to fabricate ZnO films on glass substrates. The sol-gel fabrication process of the ZnO films is described. The influence of precursor concentration on the material properties of the ZnO films was investigated. Atomic force microscopy and X-ray diffractometry were employed to examine the structural properties of the ZnO films. The optical properties of the ZnO films were characterized with ultraviolet-visible spectroscopy. The experimental results reveal that the precursor concentration in the sol-gel spin coating process exerts a strong influence on the properties of the ZnO films. The effects of the precursor concentration are discussed. Document Type: Articl