1 research outputs found
Field-Free Spin–Orbit Torque Switching from Geometrical Domain-Wall Pinning
Spin–orbit
torques, which utilize spin currents arising
from the spin–orbit coupling, offer a novel method for the
electrical switching of the magnetization with perpendicular anisotropy.
However, the necessity of an external magnetic field to achieve deterministic switching is an obstacle for realizing practical spin–orbit
torque devices with all-electric operation. Here, we report field-free
spin–orbit torque switching by exploiting the domain-wall motion
in an anti-notched microwire with perpendicular anisotropy, which
exhibits multidomain states stabilized by the domain-wall surface
tension. The combination of spin–orbit torque, Dzyaloshinskii–Moriya
interactions, and domain-wall surface-tension-induced geometrical
pinning allows the deterministic control of the domain wall and offers
a novel method to achieve a field-free spin–orbit
torque switching. Our work demonstrates the proof of concept of a
perpendicular memory cell that can be readily adopted in three-terminal
magnetic memory