Fine Splitting of Electron States in Silicon Nanocrystal with a Hydrogen-like Shallow Donor

Electron structure of a silicon quantum dot doped with a shallow hydrogen-like donor has been calculated for the electron states above the optical gap. Within the framework of the envelope-function approach we have calculated the fine splitting of the ground sixfold degenerate electron state as a function of the donor position inside the quantum dot. Also, dependence of the wave functions and energies on the dot size was obtained

Recent progress in photonic processing of metal‐oxide transistors

Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional high temperature thermal annealing offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. A review of recent advances in photonic processing paradigms of metal oxide thin film transistors (TFTs), is presented with particular emphasis on the use of various light source technologies for the photochemical and thermochemical conversion of precursor materials or post-deposition treatment of metal oxides and their application in thin-film electronics. The pros and cons of the different technologies are discussed in light of recent developments and prospective research in the field of modern large-area electronics is highlighted