Method of making MOS transistor having improved oxynitride dielectric

High quality ultrathin gate oxides having nitrogen atoms therein with a profile having a peak at the silicon oxide-silicon interface are formed by oxidizing a surface of a monocrystalline silicon body in an atmosphere of nitrous oxide (N.sub.2 O) at a temperature above 900.degree. C. preferably in the range of 900.degree.-1100.degree. C., and then heating the silicon body and oxidized surface in an atmosphere of anhydrous ammonia to introduce additional nitrogen atoms into the oxide and increase resistance to boron penetration without degrading the oxide by charge trapping. The resulting oxynitride has less degradation under channel hot electron stress and approximately one order of magnitude longer lifetime than that of conventional silicon oxide in MIS applications.Board of Regents, University of Texas Syste

Observations of Spontaneous Raman Scattering in Silicon Slow-light Photonic Crystal Waveguides

We report the observations of spontaneous Raman scattering in silicon photonic crystal waveguides. Continuous-wave measurements of Stokes emission for both wavelength and power dependence is reported in single line-defect waveguides in hexagonal lattice photonic crystal silicon membranes. By utilizing the Bragg gap edge dispersion of the TM-like mode for pump enhancement and the TE-like fundamental mode-onset for Stokes enhancement, the Stokes emission was observed to increase by up to five times in the region of slow group velocity. The results show explicit nonlinear enhancement in a silicon photonic crystal slow-light waveguide device.Comment: 12 pages, 4 figure

A low-frequency chip-scale optomechanical oscillator with 58 kHz mechanical stiffening and more than 100th-order stable harmonics.

For the sensitive high-resolution force- and field-sensing applications, the large-mass microelectromechanical system (MEMS) and optomechanical cavity have been proposed to realize the sub-aN/Hz1/2 resolution levels. In view of the optomechanical cavity-based force- and field-sensors, the optomechanical coupling is the key parameter for achieving high sensitivity and resolution. Here we demonstrate a chip-scale optomechanical cavity with large mass which operates at ≈77.7 kHz fundamental mode and intrinsically exhibiting large optomechanical coupling of 44 GHz/nm or more, for both optical resonance modes. The mechanical stiffening range of ≈58 kHz and a more than 100th-order harmonics are obtained, with which the free-running frequency instability is lower than 10-6 at 100 ms integration time. Such results can be applied to further improve the sensing performance of the optomechanical inspired chip-scale sensors

Nanometric precision distance metrology via chip-scale soliton microcombs

Laser interferometry serves a fundamental role in science and technology, assisting precision metrology and dimensional length measurement. During the past decade, laser frequency combs - a coherent optical-microwave frequency ruler over a broad spectral range with traceability to time-frequency standards - have contributed pivotal roles in laser dimensional metrology with ever-growing demands in measurement precision. Here we report spectrally-resolved laser dimensional metrology via a soliton frequency microcomb, with nanometric-scale precision. Spectral interferometry provides information on the optical time-of-flight signature, and the large free-spectral range and high-coherence of the microcomb enables tooth-resolved and high-visibility interferograms that can be directly readout with optical spectrum instrumentation. We employ a hybrid timing signal from comb-line homodyne interferometry and microcomb spectrally-resolved interferometry - all from the same spectral interferogram. Our combined soliton and homodyne architecture demonstrates a 3-nm repeatability achieved via homodyne interferometry, and over 1,000-seconds stability in the long-term precision metrology at the white noise limits.Comment: 24 pages, 12 figure