On-chip Maxwell's demon as an information-powered refrigerator

We present an experimental realization of an autonomous Maxwell's Demon, which extracts microscopic information from a System and reduces its entropy by applying feedback. It is based on two capacitively coupled single electron devices, both integrated on the same electronic circuit. This setup allows a detailed analysis of the thermodynamics of both the Demon and the System as well as their mutual information exchange. The operation of the Demon is directly observed as a temperature drop in the System. We also observe a simultaneous temperature rise in the Demon arising from the thermodynamic cost of generating the mutual information.Comment: 10 pages, 7 figure

Thermal conductance of a proximity superconductor

We study heat transport in hybrid normal metal - superconductor - normal metal (NSN) structures. We find the thermal conductance of a short superconducting wire to be strongly enhanced beyond the BCS value due to inverse proximity effect. The measurements agree with a model based on the quasiclassical theory of superconductivity in the diffusive limit. We determine a crossover temperature below which quasiparticle heat conduction dominates over the electron-phonon relaxation.Comment: 4+ pages, 3 figure

Experimental realization of a Coulomb blockade refrigerator

We present an experimental realization of a Coulomb blockade refrigerator (CBR) based on a single-electron transistor (SET). In the present structure, the SET island is interrupted by a superconducting inclusion to permit charge transport while preventing heat flow. At certain values of the bias and gate voltages, the current through the SET cools one of the junctions. The measurements follow the theoretical model down to ∼80 mK, which was the base temperature of the current measurements. The observed cooling increases rapidly with decreasing temperature, in agreement with the theory, reaching about a 15 mK drop at the base temperature. The CBR appears as a promising electronic cooler at temperatures well below 100 mK.Peer reviewe

Modeling phosphorus diffusion gettering of iron in single crystal silicon

We propose a quantitative model for phosphorus diffusion gettering (PDG) of iron in silicon, which is based on a special fitting procedure to experimental data. We discuss the possibilities of the underlying physics of the segregation coefficient. Finally, we show that the proposed PDG model allows quantitative analysis of gettering efficiency of iron at various processing conditions.Peer reviewe