10,270 research outputs found
Edge Electron Gas
The uniform electron gas, the traditional starting point for density-based
many-body theories of inhomogeneous systems, is inappropriate near electronic
edges. In its place we put forward the appropriate concept of the edge electron
gas.Comment: 4 pages RevTex with 7 ps-figures included. Minor changes in
title,text and figure
Optically induced spin to charge transduction in donor spin read-out
The proposed read-out configuration D+D- for the Kane Si:P
architecture[Nature 393, 133 (1998)] depends on spin-dependent electron
tunneling between donors, induced adiabatically by surface gates. However,
previous work has shown that since the doubly occupied donor state is so
shallow the dwell-time of the read-out state is less than the required time for
measurement using a single electron transistor (SET). We propose and analyse
single-spin read-out using optically induced spin to charge transduction, and
show that the top gate biases, required for qubit selection, are significantly
less than those demanded by the Kane scheme, thereby increasing the D+D-
lifetime. Implications for singlet-triplet discrimination for electron spin
qubits are also discussed.Comment: 8 pages, 10 figures; added reference, corrected typ
Donor Electron Wave Functions for Phosphorus in Silicon: Beyond Effective Mass Theory
We calculate the electronic wave-function for a phosphorus donor in silicon
by numerical diagonalisation of the donor Hamiltonian in the basis of the pure
crystal Bloch functions. The Hamiltonian is calculated at discrete points
localised around the conduction band minima in the reciprocal lattice space.
Such a technique goes beyond the approximations inherent in the effective-mass
theory, and can be modified to include the effects of altered donor impurity
potentials, externally applied electro-static potentials, as well as the
effects of lattice strain. Modification of the donor impurity potential allows
the experimentally known low-lying energy spectrum to be reproduced with good
agreement, as well as the calculation of the donor wavefunction, which can then
be used to calculate parameters important to quantum computing applications.Comment: 10 pages, 5 figure
Voltage Control of Exchange Coupling in Phosphorus Doped Silicon
Motivated by applications to quantum computer architectures we study the
change in the exchange interaction between neighbouring phosphorus donor
electrons in silicon due to the application of voltage biases to surface
control electrodes. These voltage biases create electro-static fields within
the crystal substrate, perturbing the states of the donor electrons and thus
altering the strength of the exchange interaction between them. We find that
control gates of this kind can be used to either enhance, or reduce the
strength of the interaction, by an amount that depends both on the magnitude
and orientation of the donor separation.Comment: 5 Pages, 5 Figure
Why one-size-fits-all vaso-modulatory interventions fail to control glioma invasion: in silico insights
There is an ongoing debate on the therapeutic potential of vaso-modulatory
interventions against glioma invasion. Prominent vasculature-targeting
therapies involve functional tumour-associated blood vessel deterioration and
normalisation. The former aims at tumour infarction and nutrient deprivation
medi- ated by vascular targeting agents that induce occlusion/collapse of
tumour blood vessels. In contrast, the therapeutic intention of normalising the
abnormal structure and function of tumour vascular net- works, e.g. via
alleviating stress-induced vaso-occlusion, is to improve chemo-, immuno- and
radiation therapy efficacy. Although both strategies have shown therapeutic
potential, it remains unclear why they often fail to control glioma invasion
into the surrounding healthy brain tissue. To shed light on this issue, we
propose a mathematical model of glioma invasion focusing on the interplay
between the mi- gration/proliferation dichotomy (Go-or-Grow) of glioma cells
and modulations of the functional tumour vasculature. Vaso-modulatory
interventions are modelled by varying the degree of vaso-occlusion. We
discovered the existence of a critical cell proliferation/diffusion ratio that
separates glioma invasion re- sponses to vaso-modulatory interventions into two
distinct regimes. While for tumours, belonging to one regime, vascular
modulations reduce the tumour front speed and increase the infiltration width,
for those in the other regime the invasion speed increases and infiltration
width decreases. We show how these in silico findings can be used to guide
individualised approaches of vaso-modulatory treatment strategies and thereby
improve success rates
A theoretical investigation into the microwave spectroscopy of a phosphorus-donor charge-qubit in silicon: Coherent control in the Si:P quantum computer architecture
We present a theoretical analysis of a microwave spectroscopy experiment on a
charge qubit defined by a P donor pair in silicon, for which we calculate
Hamiltonian parameters using the effective-mass theory of shallow donors. We
solve the master equation of the driven system in a dissipative environment to
predict experimental outcomes. We describe how to calculate physical parameters
of the system from such experimental results, including the dephasing time,
, and the ratio of the resonant Rabi frequency to the relaxation rate.
Finally we calculate probability distributions for experimentally relevant
system parameters for a particular fabrication regime
Linking entanglement and quantum phase transitions via density functional theory
Density functional theory (DFT) is shown to provide a novel conceptual and
computational framework for entanglement in interacting many-body quantum
systems. DFT can, in particular, shed light on the intriguing relationship
between quantum phase transitions and entanglement. We use DFT concepts to
express entanglement measures in terms of the first or second derivative of the
ground state energy. We illustrate the versatility of the DFT approach via a
variety of analytically solvable models. As a further application we discuss
entanglement and quantum phase transitions in the case of mean field
approximations for realistic models of many-body systems.Comment: 6 pages, 2 figure
Band structure analysis of the conduction-band mass anisotropy in 6H and 4H SiC
The band structures of 6H and 4H SiC calculated by means of the FP-LMTO
method are used to determine the effective mass tensors for their
conduction-band minima. The results are shown to be consistent with recent
optically detected cyclotron resonance measurements and predict an unusual band
filling dependence for 6H-SiC.Comment: 5 pages including 4 postscript figures incorporated with epsfig figs.
available as part 2: sicfig.uu self-extracting file to appear in Phys. Rev.
B: Aug. 15 (Rapid Communications
Theory of valley-orbit coupling in a Si/SiGe quantum dot
Electron states are studied for quantum dots in a strained Si quantum well,
taking into account both valley and orbital physics. Realistic geometries are
considered, including circular and elliptical dot shapes, parallel and
perpendicular magnetic fields, and (most importantly for valley coupling) the
small local tilt of the quantum well interface away from the crystallographic
axes. In absence of a tilt, valley splitting occurs only between pairs of
states with the same orbital quantum numbers. However, tilting is ubiquitous in
conventional silicon heterostructures, leading to valley-orbit coupling. In
this context, "valley splitting" is no longer a well defined concept, and the
quantity of merit for qubit applications becomes the ground state gap. For
typical dots used as qubits, a rich energy spectrum emerges, as a function of
magnetic field, tilt angle, and orbital quantum number. Numerical and
analytical solutions are obtained for the ground state gap and for the mixing
fraction between the ground and excited states. This mixing can lead to valley
scattering, decoherence, and leakage for Si spin qubits.Comment: 18 pages, including 4 figure
- …