Risk Behaviors for Reproductive Tract Infection in Women Who Have Sex with Women in Beijing, China

OBJECTIVES: To assess risk behaviors for reproductive tract infections (RTI) including sexually transmitted infections (STI) among women who have sex with women (WSW) in Beijing, China. METHODS: A cross-sectional study of women recruited from venues and internet outreach analyzed using interviews. RESULTS: We recruited 224 WSW, among whom were 37 couples. The average age of participants was 25.6 years. Sex with men in the past year was reported by 10.7% of participants. During the past year, 34.3% (77/224) had had >1 sexual partner and 72.4% (162/224) had ever had >1 sexual partner. Condom use in the last sex with a man was reported by 54.2% (13/24) of women; 12.5% (3/24) reported never having used a condom with a man in the past year. In the past year, 13.4% (30/224) reported using sex toys with their female partners; of these, 43.3% (13/30) reported consistent condom use with the sex toys and 36.7% (11/30) had shared sex toys. Among participants 65.2% (120/184) reported that their "G-spot" had been stimulated during sex, 49.2% (59/120) of whom reported bleeding during or after sex. Only 12.5% (8/64) of those never reporting "G spot" stimulation reported bleeding during or after sex (P<0.001). CONCLUSIONS: WSW in Beijing engaged in high-risk sexual behaviors that may carry a substantial risk of being infected with STI/RTI. To implement STI/RTI prevention and intervention among women, women-women sexual behavior should be considered when doing research and intervention programs

Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

TaNx diffusion barriers with good barrier properties at subnanometer thickness were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from pentakis(dimethylamino)Ta. Hydrogen and/or nitrogen plasma was used as reactants to produce TaNx thin films with a different nitrogen content. The film properties including the carbon and oxygen impurity content were affected by the nitrogen flow during the process. The deposited film has nanocrystalline grains with hydrogen-only plasma, while the amorphous structure was obtained for nitrogen plasma. The diffusion barrier properties of deposited TaN films for Cu interconnects have been studied by thermal stress test based on synchrotron x-ray diffraction. The results indicate that the PE-ALD TaN films are good diffusion barriers even at a small thickness as 0.6 nm. Better diffusion barrier properties were obtained for higher nitrogen content. Based on a diffusion kinetics analysis, the nanocrystalline microstructure of the films was responsible for the better diffusion barrier properties compared to polycrystalline PE-ALD TaN films deposited from TaCl5