Nonlinear absorption and optical damage threshold of carbon-based nanostructured material embedded in a protein

Physical processes in laser–matter interaction used to be determined by generation of fast electrons resulting from efficient conversion of the absorbed laser radiation. Composite materials offer the possibility to control the absorption by choice of the host material and dopants. Reported here strong absorption of ultrashort laser pulse in a composite carbon-based nanomaterial including single-walled carbon nanotubes (SWCNTs) or multilayer graphene was measured in the intensity range between 1012 and 1016 W cm-2. A protein (lysozyme) was used as the host. The maximum absorption of femtosecond laser pulse has reached 92–96 %. The optical damage thresholds of the coatings were registered at an intensity of (1.1 ± 0.5) 9 1013 W cm-2 for the embedded SWCNTs and at (3.4 ± 0.3) 9 1013 W cm-2 for the embedded graphene. Encapsulated variant of the dispersed nanomaterial was investigated as well. It was found that supernatant protein in the coating material tends to dominate the absorption process, independently of the embedded nanomaterial. The opposite was observed for the encapsulated material.1351sciescopu

Hybrid Complementary Logic Circuits of One-Dimensional Nanomaterials with Adjustment of Operation Voltage

A new layout of predictable and controllable complementary logic circuits based on hybrid nanodevices comprising p-channel single-walled carbon nanotube (SWNT) and n-channel zinc oxide (ZnO) nanowire transistors providing a hybrid approach to combine advantageous characteristic functions for the modulation of the current and operating voltage in transistors through proton radiation generated charge, was studied. A suspension of SWNTs obtained through an arc discharge process in 1,2, dichlorobenzene (o-DCB) was prepared by a combination of sonication and centrifugation. 1 mg of SWNTs in 10 mL of o-DCB was sonicated for 5 mm and the SWNT suspension was then centrifuged for 200 mm at 16000 g followed by ultra centrifugation for 2 h at 325 000 g. The current-VTCs of transistors and logic circuits were measured using a semiconductor parameter analyzer. It was possible to achieve high performance logic circuits by selectively controlling the threshold voltages of transistors through the population of proton radiation generated charges in the dielectric layer