Schottky contact of gallium on p-type silicon

The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future applications in electronics, optoelectronics and microwave devices. In this context, gallium – silicon Schottky diode has been fabricated and analyzed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2203

Chemical, Structural and Optical Properties of ē-Beam Evaporated Tungsten Diselenide Polycrystalline Thin Film

Polycrystalline thin films of tungsten dieseline were prepared by using rarely reported technique of electron beam evaporation for transition metal dichalcogenides. High purity (99.999 %) reacted compound was used as starting material for the preparation of WSe2 thin films. Various parameters and conditions are outlined which were used for deposition of thin films. The prepared films were characterized using EDAX spectrum, X-ray diffraction, Electron diffraction, Scanning electron microscopy and optical absorption spectroscopy methods. The as grown films were found to be partially transparent, uniform and well adherent. Uniformity was confirmed by SEM. WSe2 film was found in stoichiometric proportion. XRD pattern as well as TEM images revealed the fact that the deposited films are polycrystalline in nature having hexagonal structure. From the study of optical absorption spectra it is found that the prepared films show direct allowed transition with optical band gap of 1.89 eV. The results are in good agreement with the earlier published data of WSe2 thin films deposited by different techniques. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2959

Phase Transition Sensitive Schottky Barriers In Ga-Si(P) Contacts

Investigation and understanding of Schottky diodes continue to be interesting both for basic as well as technological points of view. Even now the evolutionary aspects of such contacts are not very clearly understood. In this paper it is shown that in respect of interfacial strain contribution to the barrier heights of such contacts semiconductor – liquid metal contacts are relatively better placed than solid semiconductor-solid metal contacts. Results on Ga-Si(p) contact are discussed in this paper to show phase sensitive contribution to the barrier height of such Schottky contacts. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3099

Temperature dependent I-V characteristics of Ag/p-Sn0.2Se0.8 thin film Schottky barrier diode

Ag/p-Sn0.2Se0.8 Schottky barrier diodes have been fabricated and characterized by the current-voltage (I-V) technique as a function of temperature in the range of 303 K to 403 K. The forward bias characteristics have been analyzed on the basis of thermionic emission (TE) theory and the characteristic parameters of Schottky barrier diode such as barrier height, ideality factor and series resistance have been determined. The conventional Richardson plot was drawn and the value of Richardson constant was determined using the intersection of Ln(I0/T2) vs 1000/T. It is found to be around 15 Acm – 2K – 2 which is closer to the reported value for SnSe. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2212

MoSe2 / polyaniline solar cells

Solar cells have been investigated since long for harnessing the solar energy. During this decade, a new direction has come up where in the polymers have been used in the fabrication of solar cells. Polyaniline is one of the polymers which has shown potential for its applications in heterostructure solar cells. This material is being used along with the semiconductors like InSe, TiO2, Si etc. to form the photosensitive interface. In this direction, we report our inv estigations on the use of Molybdenum diselenide (MoSe2) as photosensitive semiconducting material in MoSe2 / polyaniline solar cells. In this paper, the preparation of MoSe2 / polyaniline solar cells has been reported. Also, the photovoltage ® photocurrent characteristics of this structure have been discussed in detail in this paper. The variation of different parameters of MoSe2 / polyaniline solar cells (like open circuit voltage, short circuit current, photoconversion efficiency and fill factor) with the intensity of incident illuminations has been reported in this paper. In present case, the photocurrent density was found to be around 250 μA/cm2 with the photovoltage around 8.5 mV (which is low) the photoconversion efficiency was found to be around 0.7 % along with the fill factor around 0.33. The efforts have been made to explain the low values of the photoconversion efficiency. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2209

Metal-semiconductor field-effect transistors fabricated using DVT grown n-MoSe2 crystals with Cu-Schottky gates

Metal-semiconductor field-effect transistors (MESFETs) based on DVT grown MoSe2 crystals and Cu Schottky gate have been fabricated and studied. When Schottky gate voltage (Vgs) changes from 0 to 10 V, the source-drain current (Ids) increases exponentially with Vgs and the conductance shows a drastic increase with positive Vgs. The fabricated n-MoSe2 MESFET have a saturated current level of about 100 mA and maximum transconductance of about 53 mA/V. Their results suggest a way of fabricating MESFETs from layered metal dichalcogenide semiconducting materials. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2207

Effect of substrate temperature on structural and morphological parameters of ZnTe thin films

Vacuum evaporated thin films of Zinc Telluride (ZnTe) of 5000 Å thickness have been deposited on glass substrates at different substrate temperatures (303 K, 373 K, 448 K). Structural parameters were obtained using XRD analysis. Atomic Force Microscope (AFM) in non-contact mode has been used to study the surface morphological properties of the deposited thin films. The results obtained from structural and surface morphological studies have been correlated and it is found that the films deposited at higher substrate temperatures possess increasingly good crystallinity and smoother surfaces. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/930

Synthesis and Photodetection Properties of Sonochemically Exfoliated Cu0.2Sn0.8Se Nanoparticles

Transition metal chalcogenides (TMCs) with atomically minute structure have shown excessive potential for their optoelectronics field applications and their counterparts. TMCs unique layer dependent properties have pinched increasing consideration of scientists. Here, the high yield synthesis of atomically minute Cu0.2Sn0.8Se nanoparticles has been reported. The nanoparticles are synthesised by sonochemical exfoliation technique. The exfoliated Cu0.2Sn0.8Se nanoparticles have orthorhombic lattice structure which is confirmed from powder X-ray Diffraction with Pnma space group. The lateral morphology of the assynthesized nanoparticles examined under transmission electron microscopy showed them to be of uniform spherical shape. The selected area electron diffraction showed a spot pattern stating the particles to be single crystalline. Moreover, the photodetector based on Cu0.2Sn0.8Se nanoparticles thin film is fabricated. The periodic 670 nm laser illumination of power intensity 3 mW/cm2 is used to study the detector properties. The enhanced photo responsivity and specific detectivity is observed along with fast response. The outstanding detection properties are revealed from the responsivity, specific detectivity, and external quantum efficiency (EQE) of Cu0.2Sn0.8Se nanoparticles-based photodetector

Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures

Cadmium sulphide (CdS), a member of group II-VI semiconductors, is a promising material based on its applications. The present investigations describe the preparation and electrical characterization of CdS thin films. CdS thin films with thickness of 1000 nm were deposited by vacuum evaporation at room temperature. Characteristic parameters of Schottky junctions formed by a thermal vapor deposition of 500 nm of Al films on pre-coated CdS glass substrates were obtained experimentally from the I-V characteristics in the temperature range of 303–393 K. Diode parameters, such as the zero-bias barrier height ?b0, flat band barrier height ?bf, ideality factor ?, and series resistance RS were investigated using the thermionic emission method