The effect of Al(NO3)3 concentration on the formation of AuNPs using low temperature hydrothermal reaction for memory application

Distribution of gold nanoparticles (AuNPs) on a substrate becomes crucial in nanotechnology applications. This work describes a route to fabricate AuNPs directly on silicon substrates by using an aluminum template in hydrothermal reaction at 80°C for 1 h. The effect of aluminum nitrate (Al(NO3)3) concentration in the hydrothermal bath was investigated. The properties of AuNPs were studied using field-emission scanning electron microscope (FESEM), x-ray diffractometer (XRD) and semiconductor characterization system (SCS). Two distinct sizes of AuNPs were observed by FESEM. XRD analysis proved the formation of AuNPs directly on the substrate. AuNPs were embedded between polymethylsilsesquioxane (PMSSQ) in order to investigate their effect on memory properties. The sample grown in 0.1 M Al(NO3)3 exhibited the largest hysteresis window (2.6 V) and the lowest Vth (2.2 V) to turn ‘ON’ the memory device. This indicated that good distribution of FCC structure AuNPs with 80±4 nm and 42±7 nm of large and small particles produced better charge storage capability. Charge transport mechanisms of AuNPs embedded in PMSSQ were explained in details whereby electrons from Si are transported across the barrier by thermionic effects via field-assisted lowering at the Si-PMSSQ interface with the combination of the Schottky and Poole Frenkel emission effect in Region 1. Trapped charge limited current (TCLC) and space charge limited current (SCLC) transport mechanism occurred in Region 2 and Region 3

Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure

Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore more porous than the traditional silicon dioxide (SiO₂) film and could pose reliability issues. This paper is an extension to previous paper [1], which reported that evaporated copper (Cu) onto spin-on MSQ has high leakage current and provides two alternative models with the aid of energy band diagrams to describe the effect of evaporated Cu onto spin-on MSQ using Metal Oxide Semiconductor capacitor (MOSC) structure

Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate

The organic methylsilsesquioxane (MSQ) demonstrates low dielectric constant value (2.6) and is promising interlayer dielectric material to reduce the capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore is more porous than the traditional SiO2 film and could pose reliability issues. This paper is aimed to characterize the MOS capacitor (MOSC) structure with evaporated and sputtered aluminium method deposited on top of spin-on MSQ. Electrical characterization using C-V and I-t measurements during bias temperature stress (BTS) were used to understand the effect of evaporated and sputtered Al on MSQ. The results show that MOSC with evaporated aluminium has lower breakdown voltage and has poor reliability as compared to structures with sputtered aluminium. The high temperature required for evaporation compared to sputtering process caused these, which cause defects at the aluminium/MSQ interface. Sputtered aluminium gate structures demonstrate Al+ injection under high positive voltage stress due to ionization at the Al/MSQ interface

An organic programmable diode with pentacene, zinc oxide nanoparticles and polymethylsilsesquioxane

In this paper, we proposed an organic programmable diode as a memory device. This device consists of layers of pentacene and zinc oxide nanoparticles embedded in polymethylsilsesquioxane. The device exhibits a change in current flow of an order up to 10(5) and is comparable or better to many reported organic diode memory devices. A two-barrier model has been used to explain the memory effect of the organic diode. The device can be written and erased multiple times similar to a flash memory. (C) 2011 Elsevier Ltd. All rights reserved

Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer

In this article the electrical characteristics of zinc oxide nanoparticles (ZnO NP) embedded in polymethylsilsesquioxane (PMSSQ) film have been studied. PMSSQ film with embedded ZnO NP was sandwiched between aluminium and ITO coated glass as a capacitor-based memory device. Charge transport mechanism in this device has been investigated. The device can be programmed and erased similar to a flash-memory. Programming the device causes the trapping of electrons transported from the aluminium into the ZnO NP via trapped-charge-limited current mechanism. The erasing of the memory device is via the Fowler-Nordheim tunneling of electrons in the opposition direction towards the aluminium electrode. (C) 2011 Elsevier B.V. All rights reserved

Introducing information technology to occupational medicine trainees

Journal of Occupational Health and Safety - Australia and New Zealand82121-128JOHZ

Microcomputer education for occupational physicians

Journal of UOEH14SUPPL.168-174JOUO

Liver Transplantation in a Child with Severe Hypercholesterolaemia in Alagille Syndrome

Annals of the Academy of Medicine Singapore30144-47AAMS

The effect of learning goal orientation and communal goal strivings on newcomer proactive behaviours and learning

Learning is central to newcomer socialization, but research has rarely investigated the individual motivations that predict learning. Drawing from motivated action theory, this study examines newcomers’ learning goal orientation and communal goal strivings, and their effects on the different domains of learning through two separate routes of information-seeking and relationship-building proactive behaviours. In Study 1,wed evelop and validate a scale for communal goal strivings, demonstrating the empirical distinctiveness of the proposed construct from related constructs of prosocial motivation and need to belong. Study 2 involved a 2-wave survey of 185 university student interns investigating newcomer learning. The results revealed that learning goal orientation predicted greater information seeking in the form of direct inquiry, which in turn predicted role, organization, and social learning. Communal goal strivings predicted the relationshipbuilding proactive behaviour of networking, and increased social and organization learning. These results underscore the value of goal strivings during socialization and provide a nuanced understanding of the relationships between goal strivings, proactive behaviours, and newcomer learning. Practical implications are discussed

Ten years of experience of liver transplantation in Singapore

Transplantation Proceedings3272139TRPP