2,083 research outputs found

    On the geometry of Siegel-Jacobi domains

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    We study the holomorphic unitary representations of the Jacobi group based on Siegel-Jacobi domains. Explicit polynomial orthonormal bases of the Fock spaces based on the Siegel-Jacobi disk are obtained. The scalar holomorphic discrete series of the Jacobi group for the Siegel-Jacobi disk is constructed and polynomial orthonormal bases of the representation spaces are given.Comment: 15 pages, Latex, AMS fonts, paper presented at the the International Conference "Differential Geometry and Dynamical Systems", August 25-28, 2010, University Politehnica of Bucharest, Romani

    Ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes

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    We report an observation of ultra-low-frequency self-oscillation of photocurrent in InxGa1–xAs/Al0.15Ga0.85As multiple-quantum-well p–i–n diodes. The photocurrent intensity shows self-oscillations with a characteristic frequency of ~0.1 Hz at low temperatures under reverse bias voltages. The photocurrent self-oscillation depends on applied bias voltage, temperature, illumination power, and indium content of quantum-well layers. These dependences indicate that the photocurrent self-oscillation is attributed to photogenerated carriers trapped in localized centers within InxGa1–xAs quantum-well regions

    Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes

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    Temperature and injection current dependence of electroluminescence (EL) spectral intensity of the superbright green and blue InGaN single-quantum-well (SQW) light-emitting diodes has been studied over a wide temperature range (T = 15–300 K) and as a function of injection current level (0.1–10 mA). It is found that, when temperature is slightly decreased to 140 K, the EL intensity efficiently increases in both cases, as usually seen due to the improved quantum efficiency. However, with further decrease of temperature down to 15 K, unusual reduction of the EL intensity is commonly observed for both of the two diodes. At low temperatures the integrated EL intensity shows a clear trend of saturation with current, accompanying decreases of the EL differential quantum efficiency. We attribute the EL reduction due to trapping of injected carriers by nonradiative recombination centers. Its dependence on temperature and current shows a striking difference between the green and blue SQW diodes. That is, we find that the blue InGaN SQW diode with a smaller In concentration shows more drastic reduction of the EL intensity at lower temperatures and at higher currents than the green one. This unusual evolution of the EL intensity with temperature and current is due to less efficient carrier capturing by SQW. The carrier capture in the green and blue diodes also shows a keen difference owing to the different In content in the InGaN well. These results are analyzed within a context of rate equation model, assuming a finite number of radiative recombination centers. Importance of the efficient carrier capture processes by localized tail states within SQW at 180–300 K is thus pointed out for explaining the observed enhancement of radiative recombination of injected carriers in the presence of high-density misfit dislocations

    Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes

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    Temperature dependence of electroluminescence (EL) spectral intensity of the super-bright green and blue InGaN single-quantum-well (SQW) light-emitting diodes has been studied over a wide temperature range (T=15-300 K) under a weak injection current of 0.1 mA. It is found that when T is slightly decreased to 140 K, the EL intensity efficiently increases, as usually seen due to the improved quantum efficiency. However, with further decrease of T down to 15 K, it drastically decreases due to reduced carrier capture by SQW and trapping by nonradiative recombination centers. This unusual temperature-dependent evolution of the EL intensity shows a striking difference between green and blue SQW diodes owing to the different potential depths of the InGaN well. The importance of efficient carrier capture processes by localized tail states within the SQW is thus pointed out for enhancement of radiative recombination of injected carriers in the presence of the high-density dislocations. (C) 2001 American Institute of Physics

    Tsunami generation of the 1993 Hokkaido Nansei-Oki earthquake

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    Heterogeneous fault motion of the 1993 Hokkaido Nansei-Oki earthquake is studied by using seismic, geodetic and tsunami data, and the tsunami generation from the fault model is examined. Seismological analyses indicate that the focal mechanism of the first 10 s, when about a third of the total moment was released, is different from the overall focal mechanism. A joint inversion of geodetic data on Okushiri Island and the tide gauge records in Japan and Korea indicates that the largest slip, about 6 m, occurred in a small area just south of the epicenter. This corresponds to the initial rupture on a fault plane dipping shallowly to the west. The slip on the northernmost subfault, which is dipping to the east, is about 2 m, while the slips on the southern subfaults, which are steeply dipping to the west, are more than 3 m. Tsunami heights around Okushiri Island are calculated from the heterogeneous fault model using different grid sizes. Computation on the smaller grids produces large tsunami height that are closer to the observed tsunami runup heights. Tsunami propagation in the nearly closed Japan Sea is examined as the free oscillation of the Japan Sea. The excitation of the free oscillation by this earthquake is smaller than that by the 1964 Niigata or 1983 Japan Sea earthquake.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/43222/1/24_2004_Article_BF00874395.pd

    Neoclassical Toroidal Viscosity Calculations in Tokamaks Using a δf Monte Carlo Simulation and Their Verifications

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    Neoclassical toroidal viscosities (NTVs) in tokamaks are investigated using a δf Monte Carlo simulation, and are successfully verified with a combined analytic theory over a wide range of collisionality. A Monte Carlo simulation has been required in the study of NTV since the complexities in guiding-center orbits of particles and their collisions cannot be fully investigated by any means of analytic theories alone. Results yielded the details of the complex NTV dependency on particle precessions and collisions, which were predicted roughly in a combined analytic theory. Both numerical and analytic methods can be utilized and extended based on these successful verifications
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