A Note in the Skyrme Model with Higher Derivative Terms

Another stabilizer term is used in the classical Hamiltonian of the Skyrme Model that permits in a much simple way the generalization of the higher-order terms in the pion derivative field. Improved numerical results are obtained.Comment: Latex. Figure not include; available upon request. 7 pages, report

2D materials and van der Waals heterostructures

The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With new 2D materials, truly 2D physics has started to appear (e.g. absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc). Novel heterostructure devices are also starting to appear - tunneling transistors, resonant tunneling diodes, light emitting diodes, etc. Composed from individual 2D crystals, such devices utilize the properties of those crystals to create functionalities that are not accessible to us in other heterostructures. We review the properties of novel 2D crystals and how their properties are used in new heterostructure devices

Electronic compressibility of a graphene bilayer

We calculate the electronic compressibility arising from electron-electron interactions for a graphene bilayer within the Hartree-Fock approximation. We show that, due to the chiral nature of the particles in this system, the compressibility is rather different from those of either the two-dimensional electron gas or ordinary semiconductors. We find that an inherent competition between the contributions coming from intra-band exchange interactions (dominant at low densities) and inter-band interactions (dominant at moderate densities) leads to a non-monotonic behavior of the compressibility as a function of carrier density.Comment: 4 pages, 4 figures. Final versio

Voltage-driven quantum oscillations in graphene

We predict unusual (for non-relativistic quantum mechanics) electron states in graphene, which are localized within a finite-width potential barrier. The density of localized states in the sufficiently high and/or wide graphene barrier exhibits a number of singularities at certain values of the energy. Such singularities provide quantum oscillations of both the transport (e.g., conductivity) and thermodynamic properties of graphene - when increasing the barrier height and/or width, similarly to the well-known Shubnikov-de-Haas (SdH) oscillations of conductivity in pure metals. However, here the SdH-like oscillations are driven by an electric field instead of the usual magnetically-driven SdH-oscillations.Comment: 4 pages, 4 figure

Probing the two-scale-factor universality hypothesis by exact rotation symmetry-breaking mechanism

We probe the two-scale factor universality hypothesis by evaluating, firstly explicitly and analytically at the one-loop order, the loop quantum corrections to the amplitude ratios for O($N$) $\lambda\phi^{4}$ scalar field theories with rotation symmetry-breaking in three distinct and independent methods in which the rotation symmetry-breaking mechanism is treated exactly. We show that the rotation symmetry-breaking amplitude ratios turn out to be identical in the three methods and equal to their respective rotation symmetry-breaking ones, although the amplitudes themselves, in general, depend on the method employed and on the rotation symmetry-breaking parameter. At the end, we show that all these results can be generalized, through an inductive process based on a general theorem emerging from the exact calculation, to any loop level and physically interpreted based on symmetry ideas.Comment: 17 pages, 3 figure

Strain-induced gauge and Rashba fields in ferroelectric Rashba lead chalcogenide PbX monolayers (X = S, Se, Te)

One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable spin-orbital properties. In this work, based on our previous tight-binding (TB) results, we derive an effective low-energy Hamiltonian around the symmetry points that captures the effects of strain on the electronic properties of PbX. We find that strains induce gauge fields which shift the Rashba point and modify the Rashba parameter. This effect is equivalent to the application of in-plane magnetic fields. The out-of-plane strain, which is proportional to the electric polarization, is also shown to modify the Rashba parameter. Overall, our theory connects strain and spin splitting in ferroelectric Rashba materials, which will be important to understand the strain-induced variations in local Rashba parameters that will occur in practical applications

Spin-Orbit Dirac Fermions in 2D Systems

We propose a novel model for including spin-orbit interactions in buckled two dimensional systems. Our results show that in such systems, intrinsic spin-orbit coupling leads to a formation of Dirac cones, similar to Rashba model. We explore the microscopic origins of this behaviour and confirm our results using DFT calculations

Two-dimensional square buckled Rashba lead chalcogenides

We propose the lead sulphide (PbS) monolayer as a two-dimensional semiconductor with a large Rashba-like spin-orbit effect controlled by the out-of-plane buckling. The buckled PbS conduction band is found to possess Rashba-like dispersion and spin texture at the M and Γ points, with large effective Rashba parameters of λ∼5 eV Å and λ∼1 eV Å, respectively. Using a tight-binding formalism, we show that the Rashba effect originates from the very large spin-orbit interaction and the hopping term that mixes the in-plane and out-of-plane p orbitals of Pb and S atoms. The latter, which depends on the buckling angle, can be controlled by applying strain to vary the spin texture as well as the Rashba parameter at Γ and M. Our density functional theory results together with tight-binding formalism provide a unifying framework for designing Rashba monolayers and for manipulating their spin properties.P.Z.H., H.S.P., and D.K.C. acknowledge the support of the Physics and Mechanical Engineering Department at Boston University. P.Z.H. is grateful for the hospitality of the NUS Centre for Advanced 2D Materials and Graphene Research Centre where this work was initiated. D.K.C. acknowledges the hospitality of the Aspen Center for Physics, which is supported by the US National Science Foundation Grant No. PHY-1607611. A.S.R., A.C.,and A.H.C.N. acknowledge support by the National Research Foundation, Prime Minister Office, Singapore, under its Medium Sized Centre Programme and CRP award "Novel 2D materials with tailored properties: Beyond graphene" (Grant No. R-144-000295-281). (Physics and Mechanical Engineering Department at Boston University; PHY-1607611 - US National Science Foundation; R-144-000295-281 - National Research Foundation, Prime Minister Office, Singapore, under its Medium Sized Centre Programme and CRP award "Novel 2D materials with tailored properties: Beyond graphene")Published versio

Renormalization-group approach to superconductivity: from weak to strong electron-phonon coupling

We present the numerical solution of the renormalization group (RG) equations derived in Ref. [1], for the problem of superconductivity in the presence of both electron-electron and electron-phonon coupling at zero temperature. We study the instability of a Fermi liquid to a superconductor and the RG flow of the couplings in presence of retardation effects and the crossover from weak to strong coupling. We show that our numerical results provide an ansatz for the analytic solution of the problem in the asymptotic limits of weak and strong coupling.Comment: 8 pages, 3 figures, conference proceedings for the Electron Correlations and Materials Properties, in Kos, Greece, July 5-9, 200

Modeling disorder in graphene

We present a study of different models of local disorder in graphene. Our focus is on the main effects that vacancies -- random, compensated and uncompensated --, local impurities and substitutional impurities bring into the electronic structure of graphene. By exploring these types of disorder and their connections, we show that they introduce dramatic changes in the low energy spectrum of graphene, viz. localized zero modes, strong resonances, gap and pseudogap behavior, and non-dispersive midgap zero modes.Comment: 16 pages, lower resolution figure