Force Constant, IR Absorption Frequency & Debye Temperature of Li, Na, K, Rb, Cs, Ag(I), TI(I) & Cu(I) Halide Crystals

97-9

Tunnelling Characteristics of Stone-Wales Defects in Monolayers of Sn and Group-V Elements

Topological defects in ultrathin layers are often formed during synthesis and processing, thereby, strongly influencing their electronic properties . In this paper, we investigate the role of Stone-Wales (SW) defects in modifying the electronic properties of the monolayers of Sn and group-V elements. The calculated results find the electronic properties of stanene (monolayer of Sn atoms) to be strongly dependent on the concentration of SW-defects e.g., defective stanene has nearly zero band gap (~ 0.03 eV) for the defect concentration of 2.2 x 10^13 cm^-2 which opens up to 0.2 eV for the defect concentration of 3.7 x 10^13 cm^-2. In contrast, SW-defects appear to induce conduction states in the semiconducting monolayers of group-V elements. These conduction states act as channels for electron tunnelling, and the calculated tunnelling characteristics show the highest differential conductance for the negative bias with the asymmetric current-voltage characteristics. On the other hand, the highest differential conductance was found for the positive bias in stanene. Simulated STM topographical images of stanene and group-V monolayers show distinctly different features in terms of their cross-sectional views and distance-height profiles which can serve as fingerprints to identify the topological defects in the monolayers of group-IV and group-V elements in experiments.Comment: 18 pages, 5 figures, 1 tabl

Complexes of Co(II) & Ni(II) with N-p-Tolyl- & N-p-Chlorophenyl-dithiocarbamates

179-18