54 research outputs found

    ВлияниС ΠΎΡ‚Π½ΠΎΡΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠΉ ΡˆΠΈΡ€ΠΈΠ½Ρ‹ Π·ΡƒΠ±Ρ‡Π°Ρ‚Ρ‹Ρ… колСс Π½Π° объСм Π·ΡƒΠ±ΠΎΡ€Π΅Π·Π½Ρ‹Ρ… Ρ€Π°Π±ΠΎΡ‚

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    In order to optimize the soldering process of laserbars onto heatsinks with Indium solder, several investigations have been made. First the growth of the Indium oxide film is examined. With this knowledge four different reduction methods are selected. Formic acid as a wet chemical reduction, a plasma activated Hydrogen/Argon gas, a gas enriched with formic acid, and a protective layer of Gold were investigated and compared for an optimized reduction of the oxide film of the Indium solder. A cross section of the solder interface after the soldering process is made in order to see the distribution of the metals. High diffusion of the solder with its contact partners is a sign of a good connection. Enough pure Indium has to be available after the soldering process in order to use its creek properties to reduce the mechanical stress in the laserbar

    Об ΠΎΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½ΠΈΠΈ ΠΎΠΏΡ‚ΠΈΠΌΠ°Π»ΡŒΠ½Ρ‹Ρ… расстояний ΠΌΠ΅ΠΆΠ΄Ρƒ Ρ€Π°Π·Π²Π΅Π΄ΠΎΡ‡Π½Ρ‹ΠΌΠΈ Π²Ρ‹Ρ€Π°Π±ΠΎΡ‚ΠΊΠ°ΠΌΠΈ Π² связи с Ρ€Π°Π·Π»ΠΈΡ‡Π½Ρ‹ΠΌΠΈ Ρ€Π°Π·ΠΌΠ΅Ρ€Π°ΠΌΠΈ участков ΠΈ Π°Π½ΠΈΠ·ΠΎΡ‚Ρ€ΠΎΠΏΠ½ΠΎΡΡ‚ΡŒΡŽ Ρ‚Π΅Π» ΠΏΠΎΠ»Π΅Π·Π½Ρ‹Ρ… ископаСмых

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    The main challenge to address single emitters in a high-power diode-laser-bar is the thermal and electrical management to avoid crosstalking. Especially p-side up assembly leads to increasing thermal influence of neighboring emitters due to the low thermal conductivity of GaAs. Electro-magnetic fields inside and outside the laser-bar, for example caused by high frequency modulation (10 MHz) at a high current (up to 1 A), induce voltages into neighboring electrical circuits, hence the output power of neighboring emitters can be affected

    Π“Π΅ΠΎΡ‚Π΅ΠΌΠΏΠ΅Ρ€Π°Ρ‚ΡƒΡ€Π½Ρ‹ΠΉ Ρ€Π΅ΠΆΠΈΠΌ баТСновской свиты ΠΈ нСфтСпСрспСктивныС Π·ΠΎΠ½Ρ‹ ΠΌΠ΅Π»ΠΎΠ²Ρ‹Ρ… ΠΎΡ‚Π»ΠΎΠΆΠ΅Π½ΠΈΠΉ (ΠΡŽΡ€ΠΎΠ»ΡŒΡΠΊΠ°Ρ ΠΌΠ΅Π³Π°Π²ΠΏΠ°Π΄ΠΈΠ½Π°)

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    По Π·Π°ΠΌΠ΅Ρ€Π°ΠΌ пластовых Ρ‚Π΅ΠΌΠΏΠ΅Ρ€Π°Ρ‚ΡƒΡ€ Π²Π΅Ρ€Ρ…Π½Π΅ΡŽΡ€ΡΠΊΠΈΡ… ΠΎΡ‚Π»ΠΎΠΆΠ΅Π½ΠΈΠΉ построСна ΠΊΠ°Ρ€Ρ‚Π° распрСдСлСния Π³Π΅ΠΎΡ‚Π΅ΠΌΠΏΠ΅Ρ€Π°Ρ‚ΡƒΡ€ баТСновской свиты ΠΡŽΡ€ΠΎΠ»ΡŒΡΠΊΠΎΠΉ ΠΌΠ΅Π³Π°Π²ΠΏΠ°Π΄ΠΈΠ½Ρ‹ ΠΈ структур Π΅Π΅ обрамлСния. По Π³Π΅ΠΎΡ‚Π΅ΠΌΠΏΠ΅Ρ€Π°Ρ‚ΡƒΡ€Π½ΠΎΠΌΡƒ ΠΊΡ€ΠΈΡ‚Π΅Ρ€ΠΈΡŽ Π²Ρ‹Π΄Π΅Π»Π΅Π½Ρ‹ ΠΎΡ‡Π°Π³ΠΈ интСнсивной Π³Π΅Π½Π΅Ρ€Π°Ρ†ΠΈΠΈ баТСновских Π½Π΅Ρ„Ρ‚Π΅ΠΉ. ΠœΠ΅ΡΡ‚ΠΎΠΏΠΎΠ»ΠΎΠΆΠ΅Π½ΠΈΡ эпицСнтров ΠΎΡ‡Π°Π³ΠΎΠ² Ρ€Π΅ΠΊΠΎΠΌΠ΅Π½Π΄ΠΎΠ²Π°Π½Ρ‹ Π² качСствС ΠΏΠ΅Ρ€Π²ΠΎΠΎΡ‡Π΅Ρ€Π΅Π΄Π½Ρ‹Ρ… Π·ΠΎΠ½ для выявлСния ΠΎΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠ² Π² ΠΌΠ΅Π»ΠΎΠ²ΠΎΠΌ нСфтСгазоносном комплСксС

    АвтоматичСскоС Π·Π°ΠΊΠΎΡ€Π°Ρ‡ΠΈΠ²Π°Π½ΠΈΠ΅ ΠΎΡ‚Π΄Π΅Π»ΡŒΠ½Ρ‹Ρ… Ρ„Π°Π· Π»ΠΈΠ½ΠΈΠΉ для Π»ΠΈΠΊΠ²ΠΈΠ΄Π°Ρ†ΠΈΠΈ Π΄ΡƒΠ³ΠΎΠ²Ρ‹Ρ… ΠΊΠΎΡ€ΠΎΡ‚ΠΊΠΈΡ… Π·Π°ΠΌΡ‹ΠΊΠ°Π½ΠΈΠΉ

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    During the last few years high power diode laser arrays have become well established for direct material processing due to their high efficiency of more than 50%. But standard broad-area waveguide designs are susceptible to modal instabilities and filamentations resulting in low beam qualities. The beam quality increases by more than a factor of four by using tapered laser arrays, but so far they suffer from lower efficiencies. Therefore tapered lasers are mainly used today as single emitters in external resonator configurations. With increased output power and lifetime, they will be much more attractive for material processing and for pumping of fiber amplifiers. High efficiency tapered mini bars emitting at a wavelength of 980 nm are developed, and in order to qualify the bars, the characteristics of single emitters and mini bars from the same wafer have been compared. The mini bars have a width of 6 mm with 12 emitters. The ridge waveguide tapered lasers consist of a 500 Β΅m long ridge and a 2000 Β΅m long tapered section. The results show very similar behavior of the electro-optical characteristics and the beam quality for single emitters and bars. Due to different junction temperatures, different slope efficiencies were measured: 0.8 W/A for passively cooled mini bars and 1.0 W/A for actively cooled mini-bars and single emitters. The threshold current of 0.7 A per emitter is the same for single emitters and emitter arrays. Output powers of more than 50 W in continuous wave mode for a mini bar with standard packaging demonstrates the increased power of tapered laser bars

    ΠŸΠΎΠ²Ρ‹ΡˆΠ΅Π½ΠΈΠ΅ насыпной плотности закиси-окиси ΡƒΡ€Π°Π½Π°, ΠΏΠΎΠ»ΡƒΡ‡Π°Π΅ΠΌΠΎΠΉ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ пСроксидного осаТдСния ΠΈΠ· растворов Ρ‚ΠΎΠ²Π°Ρ€Π½ΠΎΠ³ΠΎ дСсорбата

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    High beam quality can be achieved by accurate adjustment of the mechanical and microoptical components in the manufacturing process of high power diode laser stacks. A characterization device which can determine these parameters by automatically measuring the radiation properties of high-power diode-laser stacks has been developed. The result is a mechanically robust, easy to use characterization device of high reliability suited for applications in quality control and product optimization

    БвСдСния ΠΎΠ± Π°Π²Ρ‚ΠΎΡ€Π°Ρ…

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    ΠŸΡ€Π΅Π΄ΡΡ‚Π°Π²Π»Π΅Π½Ρ‹ Π² Π°Π»Ρ„Π°Π²ΠΈΡ‚Π½ΠΎΠΌ порядкС Π°Π²Ρ‚ΠΎΡ€Ρ‹ ΠΈ области ΠΈΡ… Π½Π°ΡƒΡ‡Π½Ρ‹Ρ… интСрСсов, контактная информация

    Macropinocytotic uptake and infection of human epithelial cells with species B2 adenovirus type 35

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    The human adenovirus serotype 35 (HAdV-35, short Ad35) causes kidney and urinary tract infections, and infects respiratory organs of immunocompromised individuals. Unlike other adenoviruses, Ad35 has a low seroprevalence which makes Ad35-based vectors promising candidates for gene therapy. Ad35 utilizes CD46 and integrins as receptors for infection of epithelial and hematopoietic cells. Here, we show that infectious entry of Ad35 into HeLa, human kidney HK-2 cells and normal human lung fibroblasts strongly depended on CD46 and integrins but not heparan sulfate, and variably required the large GTPase dynamin. Ad35 infections were independent of expression of the carboxy-terminal domain of AP180 which effectively blocks clathrin-mediated uptake. Ad35 infections were inhibited by small chemicals against the serine/threonine kinase Pak1 (p21-activated kinase), protein kinase C (PKC), sodium-proton exchangers, actin and acidic organelles. Remarkably, the F-actin inhibitor jasplakinolide, the Pak1 inhibitor IPA-3 or the sodium-proton exchange inhibitor EIPA blocked the endocytic uptake of Ad35. Dominant-negative proteins or small interfering RNAs against factors driving macropinocytosis, including the small GTPase Rac1, Pak1 or the Pak1 effector C-terminal binding protein 1 (CtBP1) potently inhibited Ad35 infection. Confocal laser scanning microscopy, electron microscopy and live cell imaging showed that Ad35 colocalized with fluid phase markers in large endocytic structures that were positive for CD46, alpha v integrins and also CtBP1. Our results extend earlier observations with HAdV-3 (Ad3), and establish macropinocytosis as an infectious pathway for species B human adenoviruses in epithelial and hematopoietic cells

    Exact field ionization rates in the barrier suppression-regime from numerical TDSE calculations

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    Numerically determined ionization rates for the field ionization of atomic hydrogen in strong and short laser pulses are presented. The laser pulse intensity reaches the so-called "barrier suppression ionization" regime where field ionization occurs within a few half laser cycles. Comparison of our numerical results with analytical theories frequently used shows poor agreement. An empirical formula for the "barrier suppression ionization"-rate is presented. This rate reproduces very well the course of the numerically determined ground state populations for laser pulses with different length, shape, amplitude, and frequency. Number(s): 32.80.RmComment: Enlarged and newly revised version, 22 pages (REVTeX) + 8 figures in ps-format, submitted for publication to Physical Review A, WWW: http://www.physik.tu-darmstadt.de/tqe

    Natural parenting : back to basics in infant care

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