109 research outputs found

    Robustness and stability of half-metallic ferromagnetism in alkaline-earth metal mononitrides against doping and deformation

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    We employ ab-initio electronic structure calculations and study the magnetic properties of CaN and SrN compounds crystallizing in the rocksalt structure. These alkaline-earth metal mononitrides are found to be half-metallic with a total spin magnetic moment per formula unit of 1.0 μB\mu_B. The Curie temperature is estimated to be 480 K for CaN and 415 K for SrN well-above the room temperature. Upon small degrees of doping with holes or electrons, the rigid-band model suggests that the magnetic properties are little affected. Finally we studied for these alloys the effect of deformation taking into account tetragonalization keeping constant the unit cell volume which models the growth on various substrates. Even large degrees of deformation only marginally affect the electronic and magnetic properties of CaN and SrN in the rocksalt structure. Finally, we show that this stands also for the zincblende structure. Our results suggest that alkaline-earth metal mononitrides are promising materials for magnetoelectronic applications.Comment: REVISED VERSION, 7 pages, 3 figures, 2 table

    3d-electron induced magnetic phase transition in half-metallic semi-Heusler alloys

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    We study the effect of the non-magnetic 3\textit{d} atoms on the magnetic properties of the half-metallic (HM) semi-Heusler alloys Co1−x_{1-x}Cux_{x}MnSb and Ni1−x_{1-x}Cux_{x}MnSb (0≤x≤10 \leq x \leq 1) using first-principles calculations. We determine the magnetic phase diagram of both systems at zero temperature and obtain a phase transition from a ferromagnetic to an antiferromagnetic state. For low Cu concentrations the ferromagnetic RKKY-like exchange mechanism is dominating, while the antiferromagnetic superexchange coupling becomes important for larger Cu content leading to the observed magnetic phase transition. A strong dependence of the magnetism in both systems on the position of the Fermi level within the HM gap is obtained. Obtained results are in good agreement with the available experimental data

    Ab-initio determined electronic and magnetic properties of half-metallic NiCrSi and NiMnSi Heusler alloys; the role of interfaces and defects

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    Using state-of-the-art first-principles calculations we study the properties of the ferromagnetic Heusler compounds NiYSi where Y stands for V, Cr or Mn. NiCrSi and NiMnSi contrary to NiVSi are half-metallic at their equilibrium lattice constant exhibiting integer values of the total spin magnetic moment and thus we concentrate on these two alloys. The minority-spin gap has the same characteristics as for the well-known NiMnSb alloy being around ∼\sim1 eV. Upon tetragonalization the gap is present in the density of states even for expansion or contraction of the out-of-plane lattice parameter by 5%. The Cr-Cr and Mn-Mn interactions make ferromagnetism extremely stable and the Curie temperature exceeds 1000 K for NiMnSi. Surface and interfaces with GaP, ZnS and Si semiconductors are not half-metallic but in the case of NiCrSi the Ni-based contacts present spin-polarization at the Fermi level over 90%. Finally, we show that there are two cases of defects and atomic-swaps. The first-ones which involve the Cr(Mn) and Si atoms induce states at the edges of the gap which persists for a moderate-concentration of defects. Defects involving Ni atoms induce states localized within the gap completely destroying the half-metallicity. Based on single-impurity calculations we associate these states to the symmetry of the crystal

    Search for spin gapless semiconductors: The case of inverse Heusler compounds

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    We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.Comment: Submitted to Applied Physics Letter

    Voids-driven breakdown of the local-symmetry and Slater-Pauling rule in half-metallic Heusler compounds

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    Slater-Pauling (SP) rules connect the magnetic and electronic properties of the half-metallic (HM) Heuslercompounds. Employing first-principles electronic structure calculations we explore the validity of the SP rulesin the case of transition from HM semi-Heusler compounds to various cases of HM full-Heusler compounds.We show that the coherent-potential approximation yields half-metallicity and thus a generalized version of theSP rules can be derived. On the contrary, supercell calculations, which are expected to describe the experimentalsituation more accurately, show that the energy gap considerably shrinks for the intermediate compounds and inseveral cases the half-metallicity is completely destroyed. The origin of this behavior is attributed to the voids,which influence the symmetry of the lattice

    Modeling and analyzing Ca2+ channel dynamics during cardiac action potential

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    International Conference on Applied Analysis and Mathematical Modeling (2019 : Istanbul, Turkey)We have studied the cardiac action potential model which consists of 26 nonlinear first-order differential equations in a detailed manner computationally. Later, it has been discussed what is the role of the Ca2+ ion channel to the cardiac action potential by applying a mathematical measure called contribution analysis. Computational simulations are done to analyze the roles of Ca2+ gating variables and detailed analysis showed the changing dynamics of Ca2+ channel during a cardiac action potential.No sponso

    Thermal Stability of Metallic Single-Walled Carbon Nanotubes: An O(N) Tight-Binding Molecular Dynamics Simulation Study

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    Order(N) Tight-Binding Molecular Dynamics (TBMD) simulations are performed to investigate the thermal stability of (10,10) metallic Single-Walled Carbon Nanotubes (SWCNT). Periodic boundary conditions (PBC) are applied in axial direction. Velocity Verlet algorithm along with the canonical ensemble molecular dynamics (NVT) is used to simulate the tubes at the targeted temperatures. The effects of slow and rapid temperature increases on the physical characteristics, structural stability and the energetics of the tube are investigated and compared. Simulations are carried out starting from room temperature and the temperature is raised in steps of 300K. Stability of the simulated metallic SWCNT is examined at each step before it is heated to higher temperatures. First indication of structural deformation is observed at 600K. For higher heat treatments the deformations are more pronounced and the bond breaking temperature is reached around 2500K. Gradual (slow) heating and thermal equilibrium (fast heating) methods give the value of radial thermal expansion coefficient in the temperature range between 300K-600K as 0.31x10^{-5}(1/K) and 0.089x10^{-5}(1/K), respectively. After 600K, both methods give the same value of 0.089x10^{-5}(1/K). The ratio of the total energy per atom with respect to temperature is found to be 3x10^{-4} eV/K

    Functionalizing graphene by embedded boron clusters

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    We present a model system that might serve as a blueprint for the controlled layout of graphene based nanodevices. The systems consists of chains of B7 clusters implanted in a graphene matrix, where the boron clusters are not directly connected. We show that the graphene matrix easily accepts these alternating boron chains, and that the implanted boron components may dramatically modify the electronic properties of graphene based nanomaterials. This suggests a functionalization of graphene nanomaterials, where the semiconducting properties might be supplemented by parts of the graphene matrix itself, but the basic wiring will be provided by alternating chains of implanted boron clusters that connect these areas.Comment: 10 pages, 2 figures, 1 tabl
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