Influence of SiO2 micro-particles onto microstructure, mechanical properties and wear resistance of uhmwpe based composite under dry sliding friction

Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8O3 as a ferroelectric insulator, and SrRuO3 as a gate electrode, each layer prepared by pulsed laser deposition. The hysteresis behavior of the channel conductance is studied. Using gate voltage pulses of 100 µs duration and a pulse height of ±3 V, a change of a factor of two in the remnant conductance is achieved. The dependence of the conductance on the polarity of the gate pulse proves that the memory effect is driven by the ferroelectric polarization. The influence of charge trapping is also observed and discussed. © 1996 American Institute of Physics

Growth, structuring and characterisation of all-oxide thin film devices prepared by pulsed laser deposition

The combination of a variety of oxidic thin films in two materials systems is described. The first one focuses on the growth of BaZrO3 on SrTiO3 (both perovskites) and the use of these stacks as a substrate for the growth of magnetic ferrite spinel films. The second system shows the combination of oxidic conductors, ferroelectrics and semiconductors in all-oxide field effect devices. The control of stoichiometry for the ferroelectric used in this device (consisting of highly volatile components) as well as the improvement of thickness uniformity using off-axis PLD are discussed.