Evolution of structural and magnetic properties in Ta/Ni_81Fe_(19) multilayer thin films

The interdiffusion kinetics in short period (12.8 nm) Ta/Ni81Fe19 polycrystalline multilayer films has been investigated and related to the evolution of soft magnetic properties upon thermal annealing in the temperature range 300-600-degrees-C. Small angle x-ray diffraction and transmission electron microscopy were used to estimate the multilayer period. Interdiffusion in the multilayers was directly computed from the decay of the satellites near (000) in a small angle x-ray diffraction spectrum. A kinetic analysis of interdiffusion suggests that grain growth is concurrent with grain boundary diffusion of Ta in Ni81Fe19. The evolution of soft magnetic properties of Ni81Fe19, i.e., lowering of 4piM(s) and increase in coercivity H(c), also lend support to the above analysis

Probing the inter-layer exciton physics in a MoS2_2/MoSe2_2/MoS2_2 van der Waals heterostructure

Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of inter-layer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe$_2$/WSe$_2$ heterostructures. Here we report on the observation of long lived inter-layer exciton emission in a MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructure. The inter-layer nature of the observed transition is confirmed by photoluminescence spectroscopy, as well as by analyzing the temporal, excitation power and temperature dependence of the inter-layer emission peak. The observed complex photoluminescence dynamics suggests the presence of quasi-degenerate momentum-direct and momentum-indirect bandgaps. We show that circularly polarized optical pumping results in long lived valley polarization of inter-layer exciton. Intriguingly, the inter-layer exciton photoluminescence has helicity opposite to the excitation. Our results show that through a careful choice of the TMDs forming the van der Waals heterostructure it is possible to control the circular polarization of the inter-layer exciton emission.Comment: 19 pages, 3 figures. Just accepted for publication in Nano Letters (http://pubs.acs.org/doi/10.1021/acs.nanolett.7b03184

Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3

We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defect generated. Major defect types of Bi_Se antisite and partial Bi_2-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy (STEM) in conjunction with energy-dispersive X-ray spectroscopy (STEM-EDX), X-ray diffraction, and Hall effect measurements. We propose a consistent explanation to the origin of defect type, growth morphology, and transport property.Comment: 5 pages, 5 figure

Dependence of the flux creep activation energy on current density and magnetic field for MgB2 superconductor

Systematic ac susceptibility measurements have been performed on a MgB$_2$ bulk sample. We demonstrate that the flux creep activation energy is a nonlinear function of the current density $U(j)\propto j^{-0.2}$, indicating a nonlogarithmic relaxation of the current density in this material. The dependence of the activation energy on the magnetic field is determined to be a power law $U(B)\propto B^{-1.33}$, showing a steep decline in the activation energy with the magnetic field, which accounts for the steep drop in the critical current density with magnetic field that is observed in MgB$_2$. The irreversibility field is also found to be rather low, therefore, the pinning properties of this new material will need to be enhanced for practical applications.Comment: 11 pages, 6 figures, Revtex forma

Luminosity Functions of Lyman-Break Galaxies at z~4 and 5 in the Subaru Deep Field

We investigate the luminosity functions of Lyman-break galaxies (LBG) at z~4 and 5 based on the optical imaging data obtained in the Subaru Deep Field Project. Three samples of LBGs in a contiguous 875 arcmin^2 area are constructed. One consists of 3,808 LBGs at z~4 down to i'=26.85 selected with the B-R vs R-i' diagram. The other two consist of 539 and 240 LBGs at z~5 down to z'=26.05 selected with two kinds of two-color diagrams: V-i' vs i'-z' and R-i' vs i'-z'. The adopted selection criteria are proved to be fairly reliable by spectroscopic observation. We derive the luminosity functions of the LBGs at rest-frame ultraviolet wavelengths down to M_{UV}=-19.2 at z~4 and M_{UV}=-20.3 at z~5. We find clear evolution of the luminosity function over the redshift range of 0<z<6, which is accounted for by a sole change in the characteristic magnitude, M^*. The cosmic star formation rate (SFR) density at z~4 and z~5 is measured from the luminosity functions. We examine the evolution of the cosmic SFR density and its luminosity dependence over 0<z<6. The SFR density contributed from brighter galaxies is found to change more drastically with cosmic time. The contribution from brighter galaxies has a sharp peak around z=3-4, while that from fainter galaxies evolves relatively mildly with a broad peak at earlier epoch. Combining the observed SFR density with the standard Cold Dark Matter model, we compute the cosmic SFR per unit baryon mass in dark haloes, i.e., the specific SFR. The specific SFR is found to scale with redshift as (1+z)^3 up to z~4, implying that the efficiency of star formation is on average higher at higher redshift in proportion to the cooling rate within dark haloes, while this is not simply the case at z>4.Comment: 28 pages, 25 figures, accepted for publication in ApJ, a high resolution version of Figs.7,8,9 is available at http://hikari.astron.s.u-tokyo.ac.jp/~yoshida/sdflbglf

Electrical characteristics of amorphous molybdenum-nickel contacts to silicon

The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. % Mo). The contact resistivity on both p+ and n+ Si is in the 10^−6 Ω cm^2 range. The barrier height for as-deposited samples varies between φbp=0.47–0.42 V on p-type Si and between φbn=0.63–0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum φbp+φbn always equals 1.12 V, within experimental error. After thermal treatment at 500 °C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most ~0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon