3,470 research outputs found

    Polaron Transport in the Paramagnetic Phase of Electron-Doped Manganites

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    The electrical resistivity, Hall coefficient, and thermopower as functions of temperature are reported for lightly electron-doped Ca(1-x)La(x)MnO(3)(0 <= x <= 0.10). Unlike the case of hole-doped ferromagnetic manganites, the magnitude and temperature dependence of the Hall mobility for these compounds is found to be inconsistent with small-polaron theory. The transport data are better described by the Feynman polaron theory and imply intermediate coupling (alpha \~ 5.4) with a band effective mass, m*~4.3 m_0, and a polaron mass, m_p ~ 10 m_0.Comment: 7 pp., 7 Fig.s, to be published, PR

    Effect of high-K dielectrics on charge transport in graphene

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    The effect of various dielectrics on charge mobility in single layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their effect on Coulombic impurity scattering, a comprehensive picture of the effect of dielectrics on charge transport in graphene emerges. It is found that though high-Îş\kappa dielectrics can strongly reduce Coulombic scattering by dielectric screening, scattering from surface phonon modes arising from them wash out this advantage. By comparing the room-temperature transport properties with narrow-bandgap III-V semiconductors, strategies to improve the mobility in single layer graphene are outlined.Comment: 6 pages, 4 Figure

    Marginality of bulk-edge correspondence for single-valley Hamiltonians

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    We study the correspondence between the non-trivial topological properties associated with the individual valleys of gapped bilayer graphene (BLG), as a prototypical multi-valley system, and the gapless modes at its edges and other interfaces. We find that the exact connection between the valley-specific Hall conductivity and the number of gapless edge modes does not hold in general, but is dependent on the boundary conditions, even in the absence of intervalley coupling. This non-universality is attributed to the absence of a well-defined topological invariant within a given valley of BLG; yet, a more general topological invariant may be defined in certain cases, which explains the distinction between the BLG-vacuum and BLG-BLG interfaces.Comment: 7 pages, 4 figure

    Influence of the ion energy on the growth of WSx films prepared by reactive magnetron sputtering

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    Proposal for manipulating and detecting spin and orbital states of trapped electrons on helium using cavity quantum electrodynamics

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    We propose to couple an on-chip high finesse superconducting cavity to the lateral-motion and spin state of a single electron trapped on the surface of superfluid helium. We estimate the motional coherence times to exceed 15 microseconds, while energy will be coherently exchanged with the cavity photons in less than 10 nanoseconds for charge states and faster than 1 microsecond for spin states, making the system attractive for quantum information processing and cavity quantum electrodynamics experiments. Strong interaction with cavity photons will provide the means for both nondestructive readout and coupling of distant electrons.Comment: 4 pages, 3 figures, supplemental material

    Identification of main contributions to conductivity of epitaxial InN

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    Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, near-interface and bulk layers play the dominant role in the electrical conductivity of InN, while influence of the surface layer is pronounced only in the compensated low-mobility InN:Mg films

    Effect of nonequilibrium phonons on hot-electron spin relaxation in n-type GaAs quantum wells

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    We have studied the effect of nonequilibrium longitudinal optical phonons on hot-electron spin relaxation in nn-type GaAs quantum wells. The longitudinal optical phonons, due to the finite relaxation rate, are driven to nonequilibrium states by electrons under an in-plane electric field. The nonequilibrium phonons then in turn influence the electron spin relaxation properties via modifying the electron heating and drifting. The spin relaxation time is elongated due to the enhanced electron heating and thus the electron-phonon scattering in the presence of nonequilibrium phonons. The frequency of spin precession, which is roughly proportional to the electron drift velocity, can be either increased (at low electric field and/or high lattice temperature) or decreased (at high electric field and/or low lattice temperature). The nonequilibrium phonon effect is more pronounced when the electron density is high and the impurity density is low.Comment: 6 pages, 3 figure

    β-decay Strength Function of 53Ni and 52Co

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    The p process is believed to be responsible for the formation of heavy proton-rich nuclei in the universe. This work deals with the decay of two nuclei that are part of the p process, 53Ni and 52Co. β+ decays for each isotope were recorded with the Summing NaI(Tl) detector at the National Superconducting Cyclotron Laboratory. A preliminary β-decay Intensity Function was derived with Total Absorption Spectroscopy. Total energy spectra, β-particle spectra, individual γ-energy spectra, and multiplicity spectra for the decay to levels in the child nucleus were modeled with GEANT4 based on information from the National Nuclear Data Center. The experimentally measured spectra, when fit with the simulated spectra, give the probability that a particular child level is populated during decay. Refined results, when compared to theory, will provide insight into the formation of p-nuclei elements
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