46 research outputs found

    In‐plane photocurrent spectroscopy in GaAs-AlAs superlattices

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    The in‐plane photoconductivity of GaAs‐AlAs superlattices on GaAs substrates is experimentally studied as a function of the incident photon energy at different temperatures and light intensities. Superlattice and substrate are electrically isolated by a thick  Al0.3Ga0.7As barrier but connected through penetrating contacts. Depending on the transport properties of the two subsystems pseudo‐negative photoconductivity can be observed, i.e., at the absorption maximum of the superlattice the photocurrent exhibits a minimum
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