Surface morphology of DyxOy films grown on Si

The crystalline structure and surface morphology of DyxOy dielectric films grown on Si substrates were studied by grazing incidence diffraction and absorption with use of synchrotron radiation and by atomic force microscopy. The crystalline structure and the roughness of DyxOy films were found to be strongly dependent on the deposition rate. The dielectric-silicon interface depends on the type of gas used in the annealing process. Moreover. results from the near edge X-ray absorption studies, have revealed that none of the examined films has a stoichiometry close to the Dy2O3. The level of stoichiometry is determined by the technological conditions. Nevertheless, MOS structures with Dy(x)Q(y) films (EOT similar to 23 angstrom) have shown a rather good DyxOy-Si interface properties, which can be further improve by thermal annealing, and introducing of several additives, therefore DyxOy films can be considered as suitable candidates for gate dielectric in MOS devices. (c) 2006 Elsevier B.V. All rights reserved

Full Multiple Scattering Analysis of XANES at the Cd L 3- and O K- Edges in CdO Films Combined with a Soft-X-Ray Emission Investigation

X-ray absorption near edge structure (XANES) at the cadmium L3 and oxygen K edges for CdO thin films grown by pulsed laser deposition method, is interpreted within the real-space multiple scattering formalism, FEFF code. The features in the experimental spectra are well reproduced by calculations for a cluster of about six and ten coordination shells around the absorber for L3 edge of Cd and K edge of O, respectively. The calculated projected electronic density of states is found to be in good agreement with unoccupied electronic states in experimental data and allows to conclude that the orbital character of the lowest energy of the conductive band is Cd 5s-O 2p[sigma]*. The charge transfer has been quantified and not purely ionic bonding has been found. Combined XANES and resonant inelastic x-ray scattering measurements allow us to determine the direct and indirect band gap of investigated CdO films to be ~2.4 eV and ~0.9 eV, respectively

Examination of the local structure in composite and low dimensional semiconductor by X-ray Absorption Spectroscopy

X-ray absorption methods have been successfully used to obtain quantitative information about local atomic composition of two different materials. X-ray Absorption Near Edge Structure analysis and X-Ray Photoelectron Spectroscopy allowed us to determine seven chemical compounds and their concentrations in c-BN composite. Use of Extended X-ray Absorption Fine Structure in combination with Transmission Electron Microscopy enabled us to determine the composition and size of buried Ge quantum dots. It was found that the quantum dots consisted out of pure Ge core covered by 1-2 monolayers of a layer rich in Si

X-ray absorption spectroscopy study of diluted magnetic semiconductors: Zn1-xMxSe (M = Mn, Fe, Co) and Zn1-xMnxY (Y = Se, Te)

We have investigated 3d electronic states of doped transition metals in II-VI diluted magnetic semiconductors, Zn1-xMxSe (M = Mn, Fe, Co) and Zn1-xMnxY (Y = Se, Te), using the transition-metal L2,3-edge X-ray absorption spectroscopy (XAS) measurements. In order to explain the XAS spectra, we employed a tetragonal cluster model calculation, which includes not only the full ionic multiplet structure but also configuration interaction (CI). The results show that CI is essential to describe the experimental spectra adequately, indicating the strong hybridization between the transition metal 3d and the ligand p orbitals. In the study of Zn1-xMnxY (Y = Se, Te), we also found considerable spectral change in the Mn L2,3-edge XAS spectra for different ligands, confirming the importance of the hybridization effects in these materials.Comment: This paper consists of 22 pages including 4 figures. This paper is submitted to Physical Review

Resonant Inelastic Scattering in Dilue Magnetic Semiconductors by Soft-x-ray Fluorescence Spectroscopy

[[abstract]]Soft X-ray fluorescence (SXF) provides a means of measuring the element and angular momentum selective valence band density of states in complex materials. Recent studies have demonstrated that SXF excited near the absorption threshold generates an array of spectral features that depend on the nature of the material, particularly on the localization of excited states in s- and d-band solids. The current interest in dilute magnetic semiconductors (DMS) remains highly motivated by recent prospective applications, especially in optoelectronics. The Mn and S - L resonant X-ray emission spectra of Zn1−xMnxS (where 0:05 x 1) were measured as the energy of the exciting radiation was tuned across the S and Mn -L2;3 absorption edges of these compounds. Strong resonance peaks in Mn -L emission spectra and the systematic appearance of new spectral features in S -L emission spectra were observed. Partial substitution of Zn by a magnetic Mn ion results in strong hybridization of the Mn 3d orbitals with the sp band of the host semiconductor. A detailed study of resonant inelastic scattering in the vicinity of the S and Mn -L2;3 absorption edges of these DMS is presented