259 research outputs found

    Exciton-photon coupling in a ZnSe based microcavity fabricated using epitaxial liftoff

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    We report the observation of strong exciton-photon coupling in a ZnSe based microcavity fabricated using epitaxial liftoff. Molecular beam epitaxial grown ZnSe/Zn0.9_{0.9}Cd0.1_{0.1}Se quantum wells with a one wavelength optical length at the exciton emission were transferred to a SiO2_2/Ta2_2O5_5 mirror with a reflectance of 96% to form finesse matched microcavities. Analysis of our angle resolved transmission spectra reveals key features of the strong coupling regime: anticrossing with a normal mode splitting of 23.6meV23.6 meV at 20K20 K; composite evolution of the lower and upper polaritons; and narrowing of the lower polariton linewidth near resonance. The heavy hole exciton oscillator strength per quantum well is also deduced to be 1.78×1013cm−21.78 \times 10^{13} cm^{-2}.Comment: 3 pages, 3 figure

    Ultimate photo-induced Kerr rotation achieved in semiconductor microcavities

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    Photoinduced Kerr rotation by more than π/2\pi /2 radians is demonstrated in planar quantum well microcavity in the strong coupling regime. This result is close to the predicted theoretical maximum of π\pi . It is achieved by engineering microcavity parameters such that the optical impedance matching condition is reached at the smallest negative detuning between exciton resonance and the cavity mode. This ensures the optimum combination of the exciton induced optical non-linearity and the enhancement of the Kerr angle by the cavity. Comprehensive analysis of the polarization state of the light in this regime shows that both renormalization of the exciton energy and the saturation of the excitonic resonance contribute to the observed optical nonlinearities.Comment: Shortened version prepared to submit in Phys. Rev. Letter

    Nuclear spin warm-up in bulk n-GaAs

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    We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, that cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, that governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping can be studied and harnessed in much simpler model environment of n-GaAs bulk crystal.Comment: 5 pages, 4 figure

    Spin-to-Orbital Angular Momentum Conversion in Semiconductor Microcavities

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    We experimentally demonstrate a technique for the generation of optical beams carrying orbital angular momentum using a planar semiconductor microcavity. Despite being isotropic systems, the transverse electric - transverse magnetic (TE-TM) polarization splitting featured by semiconductor microcavities allows for the conversion of the circular polarization of an incoming laser beam into the orbital angular momentum of the transmitted light field. The process implies the formation of topological entities, a pair of optical half-vortices, in the intracavity field
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