Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks

In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have been subjected to constant voltage stress (CVS) conditions at accumulation and show relaxation effects in the whole range of applied stress voltages. Applied voltage polarities as well as thickness dependence of the relaxation effects have been investigated. Charge trapping is negligible at low stress fields while at higher fields (>4MV/cm) it becomes significant. In addition, we give experimental evidence that in tandem with the dielectric relaxation effect another mechanism- the so-called Maxwell-Wagner instability- is present and affects the transient current during the application of a CVS pulse. This instability is also found to be field dependent thus resulting in a trapped charge which is negative at low stress fields but changes to positive at higher fields.Comment: 27pages, 10 figures, 3 tables, regular journal contribution (accepted in IEEE TED, Vol.50, issue 10

What makes a successful transition from primary to secondary school?

This report presents the findings of a sub-study on transitions undertaken as part of the Effective Pre-school, Primary and Secondary Education 3-14 (EPPSE 3-14 project) a major longitudinal study investigating the influence of pre-school, primary and secondary school on children’s cognitive and social/behavioural development in England. The transitions sub-study of more than 500 children and families sheds light on current transition practices and highlights what helps and hinders a successful transition. It takes into account the influence of child and family background characteristics such as socio-economic status (SES) and gender. It suggests how the transition experience could be improved to enhance the smooth continuity between primary and secondary school. By adopting a mixed methods approach, the study investigated the issues related to transition for four distinctive groups: Local Authorities, children, parents and schools. Officers in six Local Authorities were asked about the way transition was dealt with in their Authority. Children in their first term at secondary school completed a questionnaire on their thoughts and experiences of transition, and the study also sought their parents’ opinions in order to illustrate the whole family’s experience. Finally, there were twelve case studies selected from the respondents of the questionnaire because of their positive experiences of transition. These involved interviews with the children and their primary and secondary teachers. This provided further details of the systems in place that support the transition processes between school phases. The sample was drawn from children and families in the wider EPPSE project. 1190 children from the EPPSE sample made a transition at the end of the 2005-06 academic year. Responses were received from 550 children (a 46% response rate) and 569 parents (a 48% response rate) from across England drawn from 6 Local Authorities (Shire County, Inner London borough, Midlands/Metropolitan region, East Anglia area, and two authorities in the North East). Children were recruited to the case studies using stratified selection to get a balanced mix by region, gender, socio-economic status (SES) and ethnicity. A wide range of data, already available from the main EPPSE study was used to complement the analyses

Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates

We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices with these stacks,show dissimilar charge trapping phenomena under varying levels of Constant- Voltage-Stress (CVS) conditions, which also influences the measured densities of the interface (Nit) and border (NBT) traps. In the present study we also report on C-Vg hysteresis curves related to Nit and NBT. We also propose a new model based on Maxwell-Wagner instabilities mechanism that explains the dielectric degradations (current decay transient behavior) of the gate stack devices grown on high mobility substrates under CVS bias from low to higher fields, and which is unlike to those used for other MOS devices. Finally, the time dependent degradation of the corresponding devices revealed an initial current decay due to relaxation, followed by charge trapping and generation of stress-induced leakage which eventually lead to hard breakdown after long CVS stressing.Comment: 19pages (double space), 7 figures, original research article, Submitted to JAP (AIP

Two Interacting Electrons in a Quasiperiodic Chain

We study numerically the effect of on-site Hubbard interaction U between two electrons in the quasiperiodic Harper's equation. In the periodic chain limit by mapping the problem to that of one electron in two dimensions with a diagonal line of impurities of strength U we demonstrate a band of resonance two particle pairing states starting from E=U. In the ballistic (metallic) regime we show explicitly interaction-assisted extended pairing states and multifractal pairing states in the diffusive (critical) regime. We also obtain localized pairing states in the gaps and the created subband due to U, whose number increases when going to the localized regime, which are responsible for reducing the velocity and the diffusion coefficient in the qualitatively similar to the non-interacting case ballistic and diffusive dynamics. In the localized regime we find propagation enhancement for small U and stronger localization for larger U, as in disordered systems.Comment: 14 pages Revtex file, 8 figures (split into 19 jpg figures). (postscript versions of the jpg figures are also available upon request) submitted to PR

A Body Shape Index (ABSI), hip index and risk of cancer in the UK Biobank cohort

Abdominal size is associated positively with the risk of some cancers but the influence of body mass index (BMI) and gluteofemoral size is unclear because waist and hip circumference are strongly correlated with BMI. We examined associations of 33 cancers with A Body Shape Index (ABSI) and hip index (HI), which are independent of BMI by design, and compared these with waist and hip circumference, using multivariable Cox proportional hazards models in UK Biobank. During a mean follow up of seven years, 14,682 incident cancers were ascertained in 200,289 men and 12,965 cancers in 230,326 women. In men, ABSI was associated positively with cancers of the head and neck (hazard ratio HR=1.14; 95% confidence interval 1.03-1.26 per one standard deviation increment), oesophagus (adenocarcinoma, HR=1.27; 1.12-1.44), gastric cardia (HR=1.31; 1.07-1.61), colon (HR=1.18; 1.10-1.26), rectum (HR=1.13; 1.04-1.22), lung (adenocarcinoma, HR=1.16; 1.03-1.30; squamous-cell carcinoma (SCC), HR=1.33; 1.17-1.52), and bladder (HR=1.15; 1.04-1.27), while HI was associated inversely with cancers of the oesophagus (adenocarcinoma, HR=0.89; 0.79-1.00), gastric cardia (HR=0.79; 0.65-0.96), colon (HR=0.92; 0.86-0.98), liver (HR=0.86; 0.75-0.98), and multiple myeloma (HR=0.86; 0.75-1.00). In women, ABSI was associated positively with cancers of the head and neck (HR=1.27; 1.10-1.48), oesophagus (SCC, HR=1.37; 1.07-1.76), colon (HR=1.08; 1.01-1.16), lung (adenocarcinoma, HR=1.17; 1.06-1.29; SCC, HR=1.40; 1.20-1.63; small-cell, HR=1.39; 1.14-1.69), kidney (clear-cell, HR=1.25; 1.03-1.50), and post-menopausal endometrium (HR=1.11; 1.02-1.20), while HI was associated inversely with skin SCC (HR=0.91; 0.83-0.99), post-menopausal kidney cancer (HR=0.77; 0.67-0.88) and post-menopausal melanoma (HR=0.90; 0.83-0.98). Unusually, ABSI was associated inversely with melanoma in men (HR=0.89; 0.82-0.96) and pre-menopausal women (HR=0.77; 0.65-0.91). Waist and hip circumference reflected associations with BMI, when examined individually, and provided biased risk estimates, when combined with BMI. In conclusion, preferential positive associations of ABSI or inverse of HI with several major cancers indicate an important role of factors determining body shape in cancer development

The struggle of a good friend getting old:cellular senescence in viral responses and therapy

Cellular senescence is a state of stable cell cycle arrest associated with macromolecular alterations and secretion of pro-inflammatory cytokines and molecules. Senescence-associated phenotypes restrict damage propagation and activate immune responses, two essential processes involved in response to viral infections. However, excessive accumulation and persistence of senescent cells can become detrimental and promote pathology and dysfunctions. Various pharmacological interventions, including antiviral therapies, lead to aberrant and premature senescence. Here, we review the molecular mechanisms by which viral infections and antiviral therapy induce senescence. We highlight the importance of these processes in attenuating viral dissemination and damage propagation, but also how prematurely induced senescent cells can promote detrimental adverse effects in humans. We describe which sequelae due to viral infections and treatment can be partly due to excessive and aberrant senescence. Finally, we propose that pharmacological strategies which eliminate senescent cells or suppress their secretory phenotype could mitigate side effects and alleviate the onset of additional morbidities. These strategies can become extremely beneficial in patients recovering from viral infections or undergoing antiviral therapy

Conductance fluctuations and boundary conditions

The conductance fluctuations for various types for two-- and three--dimensional disordered systems with hard wall and periodic boundary conditions are studied, all the way from the ballistic (metallic) regime to the localized regime. It is shown that the universal conductance fluctuations (UCF) depend on the boundary conditions. The same holds for the metal to insulator transition. The conditions for observing the UCF are also given.Comment: 4 pages RevTeX, 5 figures include

Anderson transition in three-dimensional disordered systems with symplectic symmetry

The Anderson transition in a 3D system with symplectic symmetry is investigated numerically. From a one-parameter scaling analysis the critical exponent $\nu$ of the localization length is extracted and estimated to be $\nu = 1.3 \pm 0.2$. The level statistics at the critical point are also analyzed and shown to be scale independent. The form of the energy level spacing distribution $P(s)$ at the critical point is found to be different from that for the orthogonal ensemble suggesting that the breaking of spin rotation symmetry is relevant at the critical point.Comment: 4 pages, revtex, to appear in Physical Review Letters. 3 figures available on request either by fax or normal mail from [email protected] or [email protected]

Critical level spacing distribution of two-dimensional disordered systems with spin-orbit coupling

The energy level statistics of 2D electrons with spin-orbit scattering are considered near the disorder induced metal-insulator transition. Using the Ando model, the nearest-level-spacing distribution is calculated numerically at the critical point. It is shown that the critical spacing distribution is size independent and has a Poisson-like decay at large spacings as distinct from the Gaussian asymptotic form obtained by the random-matrix theory.Comment: 7 pages REVTeX, 2 uuencoded, gzipped figures; J. Phys. Condensed Matter, in prin