Magnetic domains in III-V magnetic semiconductors

Recent progress in theoretical understanding of magnetic anisotropy and stiffness in III-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics and methods of their tuning. We evaluate the width and the energy of domain walls as well as the period of stripe domains in perpendicular films. The computed stripe width d = 1.1 um for Ga_0.957Mn_0.043As/In_0.16Ga_0.84As compares favorably to the experimental value 1.5 um, as determined by Shono et al. [Appl. Phys. Lett. 77, 1363 (2000)].Comment: 4 RevTex pages, 2 figures spelling of author's names corrected in abstract pag

Irradiated atmospheres of accreting magnetic white dwarfs with an application to the polar AM Herculis

We present a pilot study of atmospheres of accreting magnetic white dwarfs irradiated by intense fluxes at ultraviolet to infrared wavelengths. The model uses a standard LTE stellar atmosphere code which is expanded by introducing an angle-dependent external radiation source. The present results are obtained for an external source with the spectral shape of a 10 000 K blackbody and a freely adjustable spectral flux. The model provides an explanation for the observed largely filled-up Lyman lines in the prototype polar AM Herculis during its high states. It also confirms the hypotheses (i) that irradiation by cyclotron radiation and other radiation sources is the principle cause for the large heated polar caps surrounding the accretion spots on white dwarfs in polars and (ii) that much of the reprocessed light appears in the far ultraviolet and not in the soft X-ray regime as suggested in the original simple theories. We also briefly discuss the role played by hard X-rays in heating the polar cap

Building CMS Pixel Barrel Detectur Modules

For the barrel part of the CMS pixel tracker about 800 silicon pixel detector modules are required. The modules are bump bonded, assembled and tested at the Paul Scherrer Institute. This article describes the experience acquired during the assembly of the first ~200 modules.Comment: 5 pages, 7 figures, Vertex200

Measurement of the energy dependence of phase relaxation by single electron tunneling

Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasi-particle relaxation in the emitter can be extracted from the damping of the fluctuations of the local density of states (LDOS). At larger magnetic fields Zeeman splitting is observed.Comment: 2 pages, 4 figures; 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 200

Theory of Magnetic Properties and Spin-Wave Dispersion for Ferromagnetic (Ga,Mn)As

We present a microscopic theory of the long-wavelength magnetic properties of the ferromagnetic diluted magnetic semiconductor (Ga,Mn)As. Details of the host semiconductor band structure, described by a six-band Kohn-Luttinger Hamiltonian, are taken into account. We relate our quantum-mechanical calculation to the classical micromagnetic energy functional and determine anisotropy energies and exchange constants. We find that the exchange constant is substantially enhanced compared to the case of a parabolic heavy-hole-band model.Comment: 9 pages, 4 figure

The classical capacity of quantum thermal noise channels to within 1.45 bits

We find a tight upper bound for the classical capacity of quantum thermal noise channels that is within $1/\ln 2$ bits of Holevo's lower bound. This lower bound is achievable using unentangled, classical signal states, namely displaced coherent states. Thus, we find that while quantum tricks might offer benefits, when it comes to classical communication they can only help a bit.Comment: Two pages plus a bi

Spin Effects in the Local Density of States of GaAs

We present spin-resolved measurements of the local density of states in Si doped GaAs. Both spin components exhibit strong mesoscopic fluctuations. In the magnetic quantum limit, the main features of the spin-up and spin-down components of the local density of states are found to be identical apart from Zeeman splitting. Based on this observation, we introduce a mesoscopic method to measure the $g$-factor in a material where macroscopic methods are severely restricted by disorder. Differences between the spin-up and spin-down components are discussed in terms of spin relaxation due to spin-orbit coupling.Comment: 4 pages and 5 figure

Carrier induced ferromagnetism in diluted magnetic semi-conductors

We present a theory for carrier induced ferromagnetism in diluted magnetic semi-conductor (DMS). Our approach treats on equal footing quantum fluctuations within the RPA approximation and disorder within CPA. This method allows for the calculation of $T_c$, magnetization and magnon spectrum as a function of hole, impurity concentration and temperature. It is shown that, sufficiently close to $T_c$, and within our decoupling scheme (Tyablicov type) the CPA for the itinerant electron gas reduces to the Virtual Crystal Approximation. This allows, in the low impurity concentration and low density of carriers to provide analytical expression for $T_c$. For illustration, we consider the case of $Ga_{1-c}Mn_{c}As$ and compare our results with available experimental data.Comment: 5 figures included. to appear in Phys. Rev. B (brief report

EPR and ferromagnetism in diluted magnetic semiconductor quantum wells

Motivated by recent measurements of electron paramagnetic resonance (EPR) spectra in modulation-doped CdMnTe quantum wells, [F.J. Teran {\it et al.}, Phys. Rev. Lett. {\bf 91}, 077201 (2003)], we develop a theory of collective spin excitations in quasi-two-dimensional diluted magnetic semiconductors (DMSs). Our theory explains the anomalously large Knight shift found in these experiments as a consequence of collective coupling between Mn-ion local moments and itinerant-electron spins. We use this theory to discuss the physics of ferromagnetism in (II,Mn)VI quantum wells, and to speculate on the temperature at which it is likely to be observed in n-type modulation doped systems.Comment: 4 pages, 1 figur