Strong Tunneling in Double-Island Structures

We study the electron transport through a system of two low-capacitance metal islands connected in series between two electrodes. The work is motivated in part by experiments on semiconducting double-dots, which show intriguing effects arising from coherent tunneling of electrons and mixing of the single-electron states across tunneling barriers. In this article, we show how coherent tunneling affects metallic systems and leads to a mixing of the macroscopic charge states across the barriers. We apply a recently formulated RG approach to examine the linear response of the system with high tunnel conductances (up to 8e^2/h). In addition we calculate the (second order) cotunneling contributions to the non-linear conductance. Our main results are that the peaks in the linear and nonlinear conductance as a function of the gate voltage are reduced and broadened in an asymmetric way, as well as shifted in their positions. In the limit where the two islands are coupled weakly to the electrodes, we compare to theoretical results obtained by Golden and Halperin and Matveev et al. In the opposite case when the two islands are coupled more strongly to the leads than to each other, the peaks are found to shift, in qualitative agreement with the recent prediction of Andrei et al. for a similar double-dot system which exhibits a phase transition.Comment: 12 page

Co-tunneling current and shot noise in quantum dots

We derive general expressions for the current and shot noise, taking into account non-Markovian memory effects. In generalization of previous approaches our theory is valid for arbitrary Coulomb interaction and coupling strength and is applicable to quantum dots and more complex systems like molecules. A diagrammatic expansion up to second-order in the coupling strength, taking into account co-tunneling processes, allows for a study of transport in a regime relevant to many experiments. As an example, we consider a single-level quantum dot, focusing on the Coulomb-blockade regime. We find super-Poissonian shot noise due to spin-flip co-tunneling processes at an energy scale different from the one expected from first-order calculations, with a sensitive dependence on the coupling strength.Comment: 4 pages, three figures, submitted to PR

Cotunneling at resonance for the single-electron transistor

We study electron transport through a small metallic island in the perturbative regime. Using a recently developed diagrammatic technique, we calculate the occupation of the island as well as the conductance through the transistor in forth order in the tunneling matrix elements, a process referred to as cotunneling. Our formulation does not require the introduction of a cut-off. At resonance we find significant modifications of previous theories and good agreement with recent experiments.Comment: 5 pages, Revtex, 5 eps-figure

Frequency-Dependent Current Noise through Quantum-Dot Spin Valves

We study frequency-dependent current noise through a single-level quantum dot connected to ferromagnetic leads with non-collinear magnetization. We propose to use the frequency-dependent Fano factor as a tool to detect single-spin dynamics in the quantum dot. Spin precession due to an external magnetic and/or a many-body exchange field affects the Fano factor of the system in two ways. First, the tendency towards spin-selective bunching of the transmitted electrons is suppressed, which gives rise to a reduction of the low-frequency noise. Second, the noise spectrum displays a resonance at the Larmor frequency, whose lineshape depends on the relative angle of the leads' magnetizations.Comment: 12 pages, 15 figure

Conductance of the single-electron transistor: A comparison of experimental data with Monte Carlo calculations

We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a direct measurement of the parallel conductance and no ad hoc assumptions on the symmetry of the transistors are necessary. Thus we can make a comparison between our data and theoretical predictions without any adjustable parameter. Even for rather weakly conducting transistors significant deviations from the perturbative results are noted. On the other hand, path integral Monte Carlo calculations show remarkable agreement with experiments for the whole range of temperatures and conductances.Comment: 8 pages, 7 figures, revtex4, corrected typos, submitted to PR

Kondo effect in quantum dots coupled to ferromagnetic leads

We study the Kondo effect in a quantum dot which is coupled to ferromagnetic leads and analyse its properties as a function of the spin polarization of the leads. Based on a scaling approach we predict that for parallel alignment of the magnetizations in the leads the strong-coupling limit of the Kondo effect is reached at a finite value of the magnetic field. Using an equation-of-motion technique we study nonlinear transport through the dot. For parallel alignment the zero-bias anomaly may be split even in the absence of an external magnetic field. For antiparallel spin alignment and symmetric coupling, the peak is split only in the presence of a magnetic field, but shows a characteristic asymmetry in amplitude and position.Comment: 5 pages, 2 figure