304 research outputs found

    Modeling Dielectric Erosion in Multi-Step Copper Chemical-Mechanical Polishing

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    A formidable challenge in the present multi-step Cu CMP process, employed in the ultra-large-scale integration (ULSI) technology, is the control of wafer surface non-uniformity, which primarily is due to dielectric erosion and Cu dishing. In contrast with the earlier experimental and semi-theoretical investigations, a systematic way of characterizing and modeling dielectric erosion in both single- and multi-step Cu CMP processes is presented in this paper. Wafer- and die-level erosion are defined, and the plausible causes of erosion at each level are identified in terms of several geometric and physical parameters. Experimental and analytical means of determining the model parameters are also outlined. The local pressure distribution is estimated at each polishing stage based on the evolving pattern geometry and pad deformation. The single-step model is adapted for the multi-step polishing process, with multiple sets of slurry selectivities, applied pressure, and relative velocity in each step. Finally, the effect of slurry-switching point on erosion was investigated for minimizing dielectric erosion in the multi-step Cu CMP. Based on the developed multi-step erosion model, the physical significance of each model parameter on dielectric erosion is determined, and the optimal polishing practices for minimizing erosion in both multi-step and single-step polishing are suggested.Singapore-MIT Alliance (SMA

    A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

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    The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.Singapore-MIT Alliance (SMA

    A Mechanical Model for Erosion in Copper Chemical-Mechanical Polishing

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    The Chemical-mechanical polishing (CMP) process is now widely employed in the ultralarge scale integration chip fabrication. Due to the continuous advances in semiconductor fabrication technology and decreasing sub-micron feature size, the characterization of erosion, which affects circuit performance and manufacturing throughput, has been an important issue in Cu CMP. In this paper, the erosion in Cu CMP is divided into two levels. The wafer-level and die-level erosion models were developed based on the material removal rates and the geometry of incoming wafers to the Cu CMP process, including the Cu interconnect area fraction, linewidth and Cu deposition thickness. Experiments were conducted to obtain the selectivity values between the Cu, barrier layer and dielectric, and the values of within-wafer material removal rate ratio, β, for the validation of the new erosion model. It was compared with the existing models and was found to agree better with the experimental data.Singapore-MIT Alliance (SMA

    Mechanics,Mechanisms and Modeling of the Chemical Mechanical Polishing Process

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    The Chemical Mechanical polishing (CMP) process is now widely employed in the Integrated Circuit Fabrication. However, due to the complexity of process parameters on the material removal rate (MRR), mechanism of material removal and pattern effect are not well understood. In this paper, three contact regimes between the wafer surface and the polishing pad were proposed: direct contact, mixed or partial contact, and hydroplaning. The interfacial friction force has been employed to characterize these contact conditions. Several polishing models are reviewed with emphasis on the mechanical aspects of CMP. Experiments have been conducted to verify the mechanical polishing models and to identify the dominant mechanism of material removal under typical CMP conditions.Singapore-MIT Alliance (SMA

    Validation of the ECOS-16 Questionnaire in Koreans with Osteoporosis

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    Study DesignProspective study.PurposeTo evaluate the reliability and validity of the adapted Korean version of the Quality of Life Questionnaire of the European Foundation for Osteoporosis (ECOS-16).Overview of LiteratureThe validity of the Korean version of ECOS-16 has not been completely demonstrated.MethodsTranslation/retranslation of the English version of ECOS-16, and full cross-cultural adaptation were performed. The Korean version of a visual analog scale measure of pain, and the Korean versions of ECOS-16 and of the previously validated short form-36 (SF-36) were mailed to 158 consecutive patients with osteoporosis. Factor analysis and reliability assessment using kappa statistics of agreement for each item, intraclass correlation coefficient, and Cronbach's α were done. Construct validity was evaluated by comparing responses to ECOS-16 with responses to SF-36 using Pearson's correlation coefficient.ResultsFactor analysis extracted three factors. All items had a kappa statistics of agreement >0.6. The ECOS-16 showed good test/re-test reliability (0.8469) and internal consistency of Cronbach's α (0.897). The Korean version of ECOS-16 showed significant correlation with SF-36 total scores and with single SF-36 domains scores.ConclusionsThe adapted Korean version of the ECOS-16 was successfully translated and showed acceptable measurement properties. It is considered suitable for outcome assessments in Korean patients with osteoporosis

    Fasting Plasma Glucose Cutoff Value for the Prediction of Future Diabetes Development: A Study of Middle-Aged Koreans in a Health Promotion Center

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    We determined optimal fasting plasma glucose (FPG) cutoff values predictive of future diabetes development in a group of middle-aged Koreans who visited a health promotion center. The medical records of 2,964 subjects, who attended the Health Promotion Center in 1998 and 2003, were examined. Subjects were classified into four groups according to their baseline FPG values (Group 1:FPG <5.0 mM/L; Group 2: 5.0≤FPG <5.6 mM/L; Group 3: 5.6≤FPG <6.1 mM/L; Group 4: 6.1≤FPG <7.0 mM/L). No significant difference was observed between Group 1 and Group 2 in terms of diabetes incidence. However, incidence in Group 3 was significantly higher than that in Group 1 [hazards ratio 4.88 (1.65-14.41), p=0.004] and the hazards ratio in Group 4 for diabetes was 36.91 (13.11-103.61), p<0.001, versus Group 1. Receiver operator characteristics curve analysis showed that an FPG of 5.97 mM/L represents the lower limit and gives the best combination of sensitivity and specificity. Our data shows that the risk of future diabetes development started to increase below an FPG of 6.1 mM/L and suggests the importance of efforts to modify diabetes development risk factors at lower impaired fasting glucose levels

    Tin doped indium oxide core-TiO <inf>2</inf> shell nanowires on stainless steel mesh for flexible photoelectrochemical cells

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    Photoanode architecture is built on highly conductive tin doped indium oxide (ITO) nanowires (NWs) on a flexible stainless steel mesh (SSM). ITO nanowires were coated with the atomic layer deposition grown TiO 2 layer and the photoelectrochemical performance of the stainless steel mesh based photoanode were examined as a function of wire-length and shell-thickness. The photoanode consisting of 20 m-long nanowire core and 36 nm thick shell increased the photocurrent of the testing cell by 4 times, compared to a reference cell. This enhanced photochemical activity is attributed to higher light harvesting efficiency of nanowire arrays and suppressed charge recombination of core-shell structure. © 2012 American Institute of Physics

    Sicyos angulatus ameliorates atherosclerosis through downregulation of aortic inflammatory responses in apolipoprotein E-deficient mice

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    Sicyos angulatus (SA), a summer annual vine originating from Northeastern USA, is a widely distributed noxious invasive plant. However, the clinical application of SA has not been investigated previously. The purpose of present study was to determine the effects of SA on atherosclerosis and its underlying mechanism. Atherosclerosis was induced by feeding apolipoprotein E-deficient (apoE(-/-)) mice with an atherogenic diet for 8 weeks. SA was administered daily by oral gavage during induction of atherosclerosis. ApoE(-/-) mice treated with SA demonstrated a significant reduction in atherosclerotic plaque area in the whole aorta and aortic sinus compared with vehicle-treated mice. The plasma lipid profiles, including triglyceride, total cholesterol, high-density lipoprotein and low-density lipoprotein, were not affected by SA administration. Of note, gene expression levels of proatherogenic cytokines including tumor necrosis factor alpha (Tnf alpha) and interleukin-6 (Il-6) were significantly decreased in the aorta of SA administered apoE(-/-) mice. In lipopolysaccharide-stimulated RAW 264.7 macrophage cells, SA also inhibited the induction Tnfa, Il-6 and Il-1 beta in a dose-dependent manner. Furthermore, gene expression levels of endothelial cell adhesion molecules, including vascular cell adhesion protein 1 and intercellular adhesion molecule 1 were reduced in the aorta of apoE(-/-) mice treated with SA, which was followed by diminished aortic infiltration of monocytes/macrophages. In conclusion, to the best of our knowledge, this is the first study to demonstrate that SA is able to suppress the development of atherosclerosis by inhibiting the aortic expression of proinflammatory factors in atherogenic diet-fed apoE(-/-) mice. The present study may provide novel insights into the application of the environmentally problematic weed SA as a therapeutically effective natural product for preventing atherosclerosis.N
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