25,742 research outputs found
Third-order Intermodulation Reduction in Mobile Power Amplifiers by the First Stage Bias Control
In this paper, the third order intermodulation distortion (IMD3) of three-stage power amplifier (PA) is analyzed using the Volterra series. The analysis explains how the total IMD3 of the three-stage power amplifier can be reduced by the first-stage bias condition. The three-stage PA, which is fabricated using InGaP/GaAs hetero-junction bipolar transistor (HBT), operates with an optimized first driver stage bias for higher P1dB and good gain flatness. The power amplifier has been designed for 1626.5 MHz~1660.5 MHz satellite mobile communications. With π/4 DQPSK modulation signals, this PA can deliver a highly linear output power of 33 dBm from 3.6V supply voltage. At 33 dBm output power, it shows a gain of 31.9 dB, a power-added efficiency (PAE) of 39.8%, an adjacent channel power ratio (ACPR) of -28.2 dBc at a 31.25 KHz offset frequency
Scanning tunneling spectroscopic studies of the pairing state of cuprate superconductors
Quasiparticle tunneling spectra of both hole-doped (p-type) and electron-doped (n-type) cuprates are studied using a low-temperature scanning tunneling microscope. The results reveal that neither the pairing symmetry nor the pseudogap phenomenon is universal among all cuprates, and that the response of n-type cuprates to quantum impurities is drastically different from that of the p-type cuprates. The only ubiquitous features among all cuprates appear to be the strong electronic correlation and the nearest-neighbor antiferromagnetic Cu2+-Cu2+ coupling in the CuO2 planes
Spectroscopic Evidence for Anisotropic S-Wave Pairing Symmetry in MgB2
Scanning tunneling spectroscopy of superconducting MgB ( K)
were studied on high-density pellets and c-axis oriented films. The sample
surfaces were chemically etched to remove surface carbonates and hydroxides,
and the data were compared with calculated spectra for all symmetry-allowed
pairing channels. The pairing potential () is best described by an
anisotropic s-wave pairing model, with , where is the angle relative to the
crystalline c-axis, meV, and meV.Comment: 4 pages and 3 figures. Submitted to Physical Review Letters.
Corresponding author: Nai-Chang Yeh (e-mail: [email protected]
Dynamical mean-field theory of Hubbard-Holstein model at half-filling: Zero temperature metal-insulator and insulator-insulator transitions
We study the Hubbard-Holstein model, which includes both the
electron-electron and electron-phonon interactions characterized by and
, respectively, employing the dynamical mean-field theory combined with
Wilson's numerical renormalization group technique. A zero temperature phase
diagram of metal-insulator and insulator-insulator transitions at half-filling
is mapped out which exhibits the interplay between and . As () is
increased, a metal to Mott-Hubbard insulator (bipolaron insulator) transition
occurs, and the two insulating states are distinct and can not be adiabatically
connected. The nature of and transitions between the three states are
discussed.Comment: 5 pages, 4 figures. Submitted to Physical Review Letter
Effect of sintering temperature under high pressure in the uperconductivity for MgB2
We report the effect of the sintering temperature on the superconductivity of
MgB2 pellets prepared under a high pressure of 3 GPa. The superconducting
properties of the non-heated MgB2 in this high pressure were poor. However, as
the sintering temperature increased, the superconducting properties were vastly
enhanced, which was shown by the narrow transition width for the resistivity
and the low-field magnetizations. This shows that heat treatment under high
pressure is essential to improve superconducting properties. These changes were
found to be closely related to changes in the surface morphology observed using
scanning electron microscopy.Comment: 3 Pages including 3 figure
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