2 research outputs found
Nanostructured Layered Cathode for Rechargeable Mg-Ion Batteries
Nanostructured bilayered V<sub>2</sub>O<sub>5</sub> was electrochemically deposited within a carbon nanofoam conductive support. As-prepared electrochemically synthesized bilayered V<sub>2</sub>O<sub>5</sub> incorporates structural water and hydroxyl groups, which effectively stabilizes the interlayers and provides coordinative preference to the Mg<sup>2+</sup> cation in reversible cycling. This open-framework electrode shows reversible intercalation/deintercalation of Mg<sup>2+</sup> ions in common electrolytes such as acetonitrile. Using a scanning transmission electron microscope we demonstrate that Mg<sup>2+</sup> ions can be effectively intercalated into the interlayer spacing of nanostructured V<sub>2</sub>O<sub>5</sub>, enabling electrochemical magnesiation against a Mg anode with a specific capacity of 240 mAh/g. We employ HRTEM and X-ray fluorescence (XRF) imaging to understand the role of environment in the intercalation processes. A rebuilt full cell was tested by employing a high-energy ball-milled Sn alloy anode in acetonitrile with Mg(ClO<sub>4</sub>)<sub>2</sub> salt. XRF microscopy reveals effective insertion of Mg ions throughout the V<sub>2</sub>O<sub>5</sub> structure during discharge and removal of Mg ions during electrode charging, in agreement with the electrode capacity. We show using XANES and XRF microscopy that reversible Mg intercalation is limited by the anode capacity
Three-Dimensional Integrated X‑ray Diffraction Imaging of a Native Strain in Multi-Layered WSe<sub>2</sub>
Emerging
two-dimensional (2-D) materials such as transition-metal
dichalcogenides show great promise as viable alternatives for semiconductor
and optoelectronic devices that progress beyond silicon. Performance
variability, reliability, and stochasticity in the measured transport
properties represent some of the major challenges in such devices.
Native strain arising from interfacial effects due to the presence
of a substrate is believed to be a major contributing factor. A full
three-dimensional (3-D) mapping of such native nanoscopic strain over
micron length scales is highly desirable for gaining a fundamental
understanding of interfacial effects but has largely remained elusive.
Here, we employ coherent X-ray diffraction imaging to directly image
and visualize in 3-D the native strain along the (002) direction in
a typical multilayered (∼100–350 layers) 2-D dichalcogenide
material (WSe<sub>2</sub>) on silicon substrate. We observe significant
localized strains of ∼0.2% along the out-of-plane direction.
Experimentally informed continuum models built from X-ray reconstructions
trace the origin of these strains to localized nonuniform contact
with the substrate (accentuated by nanometer scale asperities, i.e.,
surface roughness or contaminants); the mechanically exfoliated stresses
and strains are localized to the contact region with the maximum strain
near surface asperities being more or less independent of the number
of layers. Machine-learned multimillion atomistic models show that
the strain effects gain in prominence as we approach a few- to single-monolayer
limit. First-principles calculations show a significant band gap shift
of up to 125 meV per percent of strain. Finally, we measure the performance
of multiple WSe<sub>2</sub> transistors fabricated on the same flake;
a significant variability in threshold voltage and the “off”
current setting is observed among the various devices, which is attributed
in part to substrate-induced localized strain. Our integrated approach
has broad implications for the direct imaging and quantification of
interfacial effects in devices based on layered materials or heterostructures