Vortex-flow electromagnetic emission in stacked intrinsic Josephson junctions

We confirmed the existence of the collective transverse plasma modes excited by the motion of the Josephson vortex lattice in stacked intrinsic Josephson junctions of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ by observing the multiple subbranches in the Josephson-vortex-flow current-voltage characteristics. We also observed the symptom of the microwave emission from the resonance between the Josephson vortex lattice and the collective transverse plasma modes, which provides the possibility of developing Josephson-vortex-flow electromagnetic oscillators.Comment: 4 pages, 3 figure

Formation of high-quality Ag-based ohmic contacts to p-type GaN

Low resistance and high reflectance ohmic contacts on p-type GaN were achieved using an Ag-based metallization scheme. Oxidation annealing was the key to achieve ohmic behavior of Ag-based contacts on p-type GaN. A low contact resistivity of similar to 5x10(-5) Omega cm(2) could be achieved from Me (=Ni, Ir, Pt, or Ru)/Ag (50/1200 angstrom) contacts after annealing at 500 degrees C for 1 min in O(2) ambient. Oxidation annealing promoted the out-diffusion of Ga atoms from the GaN layer, and Ga atoms dissolved in the in-diffused Ag layer with the formation of Ag-Ga solid solution, resulting in ohmic contact formation. Using Ru/Ni/Au (500/200/500 angstrom) overlayers on the Me/Ag contacts, the excessive incorporation of oxygen molecules into the contact interfacial region, and the out-diffusion and agglomeration of Ag, were effectively prevented during oxidation annealing. As a result, a high reflectance of 87.2% at the 460 nm wavelength and a smooth surface morphology could be obtained simultaneously. (C) 2008 The Electrochemical Society.open111618sciescopu