Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon

Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics. The direct epitaxial growth of antimonide-based compound semiconductors on silicon provides a promising approach for extending the wavelength of silicon photonics to the longer infrared range. This paper reports on the fabrication of a high performance MIR photodetector directly grown onto silicon by molecular beam epitaxy. The device exhibited an extended cutoff wavelength at ∼5.5 μm and a dark current density of 1.4 × 10–2 A/cm2 under 100 mV reverse bias at 200 K. A responsivity of 0.88 A/W and a specific detectivity in the order of 1.5 × 1010 Jones was measured at 200 K under 100 mV reverse bias operation. These results were achieved through the development of an innovative structure which incorporates a type-II InAs/InAsSb superlattice-based barrier nBn photodetector grown on a GaSb-on-silicon buffer layer. The difficulties in growing GaSb directly on silicon were overcome using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step growth temperature procedure and dislocation filters resulting in a low defect density, antiphase domain free GaSb epitaxial layer on silicon. This work demonstrates that complex superlattice-based MIR photodetectors can be directly integrated onto a Si platform, which provides a pathway toward the realization of new, high performance, large area focal plane arrays and mid-infrared integrated photonic circuits

After the coalition: towards a transformation or consolidation of British capitalism?

In the decade following the 2008 crisis, a populist insurgency engulfed the advanced capitalist world. Britain embodies a pivotal sphere within this wider global reconfiguration. Three core developments reshaped British politics in the two years after the Coalition: the rise of Brexit, the May government and Corbynism. Each of these political forms of course has its own history and future trajectory. But each also embodies a distinctive form of ‘post-crisis British politics’ in the sense that each emerged out of the post-crisis context and each pledged, in different ways, to initiate a far-reaching programme of social and economic reform. Whether these post-crisis reconfigurations will ultimately bring about a transformation or a consolidation of British capitalism remains an open question

A theoretical grounding and test of the GEM model

Entrepreneurial activity, Entrepreneurial Framework Conditions, L26, L53, O43,