Schematic diagram of transitions through the health states in the model.

<p>Schematic diagram of transitions through the health states in the model.</p

Discounted net monetary benefit.

<p><b>A.</b> Nigerian setting. <b>B.</b> South African setting.</p

Incremental cost-effectiveness scatter plots.

<p><b>A.</b> Nigerian setting. <b>B.</b> South African setting.</p

Model transitions, and quality of life estimates.

a<p>: The rates sourced from Steigbigel et al (2009) were transformed into probabilities using the Treeage RateToProb(rate; time) function. This function multiplies a rate by time, and converts it into a probability. Calculations were as follows: ratetoprob (32.8;1/100)  = 0.27963698, and ratetoprob (51.6;1/100)  = 0.403096607.</p>b<p>: Calculations were as follows: ratetoprob (2.1;1/100)  = 0.020781035, and ratetoprob (4.5;1/100)  = 0.044002518.</p>c,d,e<p>: Supporting Material S1.</p>#<p>: Upper bound assumption.</p

Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

The development of GaN-on-diamond devices holds much promise for the creation of high-power density electronics. Inherent to the growth of these devices, a dielectric layer is placed between the GaN and diamond, which can contribute significantly to the overall thermal resistance of the structure. In this work, we explore the role of different interfaces in contributing to the thermal resistance of the interface of GaN/diamond layers, specifically using 5 nm layers of AlN, SiN, or no interlayer at all. Using time-domain thermoreflectance along with electron energy loss spectroscopy, we were able to determine that a SiN interfacial layer provided the lowest thermal boundary resistance (<10 m²K/GW) because of the formation of an Si–C–N layer at the interface. The AlN and no interlayer samples were observed to have TBRs greater than 20 m²K/GW as a result of a harsh growth environment that roughened the interface (enhancing phonon scattering) when the GaN was not properly protected

Additional file 25: of Comparative genomics and prediction of conditionally dispensable sequences in legume–infecting Fusarium oxysporum formae speciales facilitates identification of candidate effectors

Disease symptoms and relative abundance of Fom -5190a in infected M. truncatula DZA315 root samples. (a) Disease symptoms of DZA315 plants at 14 days post treatment with Fom-5190a or a control (mock) treatment. (b) Relative Fom-5190a fungal abundance was determined by qRT-PCR expression of Fom-5190a_18S relative to M. truncatula_18S expression in M. truncatula DZA315 root samples harvested at 1, 2, 4 and 7 days post inoculation (dpi). Samples are averages ± SE of 4 biological replicates consisting of pools of 10 seedlings. (TIF 2196 kb