Mechanical actuator Patent

Mechanical actuator wherein linear motion changes to rotational motio

Complexity models in design

Complexity is a widely used term; it has many formal and informal meanings. Several formal models of complexity can be applied to designs and design processes. The aim of the paper is to examine the relation between complexity and design. This argument runs in two ways. First designing provides insights into how to respond to complex systems – how to manage, plan and control them. Second, the overwhelming complexity of many design projects lead us to examine how better understanding of complexity science can lead to improved designs and processes. This is the focus of this paper. We start with an outline of some observations on where complexity arises in design, followed by a brief discussion of the development of scientific and formal conceptions of complexity. We indicate how these can help in understanding design processes and improving designs

Lithium battery discharge tests

The long term discharge of a variety of lithium cells was characterized and the susceptibility of the cells to chemical variation during the slow discharge was tested. A shunt resistor was set across the terminals to monitor the voltage as a function of time. Failures were identified by premature voltage drops

Moisture-resistant coatings for optical components

Plasma polymerization technique is used to apply thin, adherent, hydrophobic coatings from chlorotrifluoroethylene monomer. Apparently much of the chlorine contained in original monomer is lost during polymerization, and characteristic C-Cl absorption in infrared region is essentially absent

Domino Waves

Motivated by a proposal of Daykin (Problem 71-19*, SIAM Review 13 (1971) 569), we study the wave that propagates along an infinite chain of dominoes and find the limiting speed of the wave in an extreme case.Comment: 10 pages, 5 figure

A comparative study of two 47 Tuc giant stars with different s-process enrichment

Here we aim to understand the origin of 47 Tuc's La-rich star Lee 4710. We report abundances for O, Na, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Co, Ni, Zn, Y, Zr, Ba, La, Ce, Pr, Nd, and Eu, and present a detailed abundance analysis of two 47 Tuc stars with similar stellar parameters but different slow neutron-capture (s-)process enrichment. Star Lee 4710 has the highest known La abundance ratio in this cluster ([La/Fe] = 1.14), and star Lee 4626 is known to have normal s-process abundances (e.g., [Ba/Eu]$<0$). The nucleosynthetic pattern of elements with Z$\gtrsim$56 for star Lee 4710 agrees with the predicted yields of a $1.3M_{\odot}$ asymptotic giant branch (AGB) star. Therefore, Lee 4710 may have been enriched by mass transfer from a more massive AGB companion, which is compatible with its location far away from the center of this relatively metal-rich ([Fe/H]$\sim-0.7$) globular cluster. A further analysis comparing the abundance pattern of Lee 4710 with data available in the literature reveals that nine out of the $\sim200$ 47 Tuc stars previously studied show strong s-process enhancements that point towards later enrichment by more massive AGB stars.Comment: ApJL in press. 6 pages, 4 figure

Strategic Group Analysis of U.S. Food Businesses Using the Two-step Clustering Method

strategic group, planning, strategy, performance, Agribusiness, Institutional and Behavioral Economics, Marketing, Productivity Analysis, M0, M14, M2, M30,

Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

The effect of hydrogen on the kinetics of solid phase epitaxy (SPE) have been studied in buried amorphous Si layers. The crystallization rate of the front amorphous/crystalline (a/c) interface is monitored with time resolved reflectivity.Secondary ion mass spectrometry(SIMS) is used to examine H implanted profiles at selected stages of the anneals. The H retardation of the SPE rate is determined up to a H concentration of 2.3×10²⁰ cm¯³ where the SPE rate decreases by 80%. Numerical simulations are performed to model the H diffusion, the moving a/c interfaces and the refinement of the H profile at these interfaces. Despite the high H concentration involved, a simple Fickian diffusion model results in good agreement with the SIMS data. The segregation coefficient is estimated to be 0.07 at 575 °C. A significant fraction of the H escapes from the a-Si layer during SPE especially once the two a/c interfaces meet which is signified by the lack of H-related voids after a subsequent high temperature anneal.This research was supported by a grant from the Australian Research Council