Channel Hot-Electron Degradation On 60-Nm Hfo2-Gated Nmosfet Dc And Rf Performances

Channel hot-carrier-induced dc and RF performance degradations in 60-nm high-k nMOSFETs are examined experimentally. RF performances such as the cutoff frequency, noise figure, linearity, and flicker noise of high-k MOSFETs show significant vulnerability to the hot-electron effect. Analytical equations for normalized RF degradations relating to the device dc and ac parameters are derived. Good agreement between the analytical predictions and experimental data is obtained. The accuracy of the model equations suggests fast and effective evaluation of noise figure and linearity degradations using simple dc and ac parameters directly. © 2006 IEEE

Correlation of Chemisorption and Electronic Effects for Metal/Oxide Interfaces: Transducing Principles for Temperature-Programmed Gas Microsensors

This Report discusses progress and accomplishments during the initial 8 months (October 1, 1998 through May 31, 1999) of a 3-year project. Work is being performed through a collaboration between NIST and the Institute for Systems Research at the University of Maryland (PI: Professor T. J. McAvoy). This three year project has a goal of producing a scientific database for conductometric sensing materials and using this information to advance gas microsensor technology. The technology will use arrays of miniature solid state devices in which adsorption of target analytes produces measurable and quantifiable changes in conductance on a suitably chosen collection of sensing materials. Microsensor development evolving from this work would allow monitoring devices to be tailored for a range of Department of Energy hazardous waste sites (and for other applications). The primary project objectives for this three year program, summarized below, have not changed from those described in our proposal document

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most technologically important parameters. We report the band offsets of the Al/Al2O3/GaAs structure and the effect of GaAs surface treatment. The energy barrier at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0 +/- 0.1 eV whereas for the unpassivated or NH4OH-treated GaAs is 3.6 eV. At the Al/Al2O3 interface, all samples yield the same barrier height of 2.9 +/- 0.2 eV. With a band gap of 6.4 +/- 0.05 eV for Al2O3, the band alignments at both Al2O3 interfaces are established. (C) 2008 American Institute of Physics

Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications

In this work, high-performance top-gated nanowire molecular flash memory has been fabricated with redox-active molecules. Different molecules with one and two redox centers have been tested. The flash memory has clean solid/molecule and dielectric interfaces, due to the pristine molecular self-assembly and the nanowire device self-alignment fabrication process. The memory cells exhibit discrete charged states at small gate voltages. Such multi-bit memory in one cell is favorable for high-density storage. These memory devices exhibit fast speed, low power, long memory retention, and exceptionally good endurance (>10⁹ cycles). The excellent characteristics are derived from the intrinsic charge-storage properties of the protected redox-active molecules. Such multi-bit molecular flash memory is very attractive for high-endurance and high-density on-chip memory applications in future portable electronics