Hybrid additive manufacturing of 3D electronic systems

A novel hybrid additive manufacturing (AM) technology combining digital light projection (DLP) stereolithography (SL) with 3D micro-dispensing alongside conventional surface mount packaging is presented in this work. This technology overcomes the inherent limitations of individual AM processes and integrates seamlessly with conventional packaging processes to enable the deposition of multiple materials. This facilitates the creation of bespoke end-use products with complex 3D geometry and multi-layer embedded electronic systems. Through a combination of four-point probe measurement and non-contact focus variation microscopy, it was identified that there was no obvious adverse effect of DLP SL embedding process on the electrical conductivity of printed conductors. The resistivity maintained to be less than 4  ×  10−4 Ω centerdot cm before and after DLP SL embedding when cured at 100 °C for 1 h. The mechanical strength of SL specimens with thick polymerized layers was also identified through tensile testing. It was found that the polymerization thickness should be minimised (less than 2 mm) to maximise the bonding strength. As a demonstrator a polymer pyramid with embedded triple-layer 555 LED blinking circuitry was successfully fabricated to prove the technical viability

Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

ISBN 978-1-4244-8574-1International audienceGaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN/AlGaN/sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10-50 bar (5 MPa) and above 300°C

Chemoresistive gas sensor manufacturing using mixed technologies

The paper presents the development of a novel suspended membrane resistive gas sensor on a ceramic substrate. The sensor is designed and simulated to be fabricated by combining laser milling techniques, conductive ceramic technology, thin film technology, and semiconductor metal oxides. Trenches are created in the alumina substrate in order to define the geometry of the heater using laser processing of the substrate. The heater is completed by filling the trenches with conductive ceramic paste and then baking to remove the solvent from the paste. The next step consists of polishing the surface to obtain a surface roughness small enough for thin film technology. A dielectric (SiO 2 or ceramic) material is then deposited, acting as hot plate and also as electrical isolation between the heater and sensing electrode. The sensing electrode consists of an interdigitated resistor made of Au or Pt with thickness in the range of 2000 -3000 Å. The gas sensitive layer (SnO 2) is deposited by screen printing or spinning. When heated it react with gas molecules and changes its resistivity, thereby acting as a sensor. The final step involves releasing the sensor, enabling it to be suspended on four bridges, to minimise the dissipation of the heat in the substrate. © 2005 IEEE

Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane

International audienceThis paper reports a high pressure sensor based on a GaN/AlGaN High Electron Mobility Transistor (HEMT) that uses its 375 mm thick sapphire substrate to provide a robust base and enables device operation up to at least 60 bar (6 MPa). Transduction of changes in ambient pressure occurs via piezoelectric and pyroelectric effects on the channel conductance. The HEMTs were strategically placed along an 8 mm2 GaN/AlGaN/GaN/sapphire chip; where the central 4 mm diameter behaves as a pressure sensitive 'drumskin'. The location of peak response lies in the HEMT at the geometric centre of the drumskin, demonstrated by the change in IDS when the pressure was increased from 0 to 60 bar. The response of six strategically placed HEMTs along the chip's surface, were compared to a finite element model to predict sensor behaviour

Chemoresistive gas sensor manufacturing using mixed technologies

The paper presents the development of a novel suspended membrane resistive gas sensor on a ceramic substrate. The sensor is designed and simulated to be fabricated by combining laser milling techniques, conductive ceramic technology, thin film technology, and semiconductor metal oxides. Trenches are created in the alumina substrate in order to define the geometry of the heater using laser processing of the substrate. The heater is completed by filling the trenches with conductive ceramic paste and then baking to remove the solvent from the paste. The next step consists of polishing the surface to obtain a surface roughness small enough for thin film technology. A dielectric (SiO 2 or ceramic) material is then deposited, acting as hot plate and also as electrical isolation between the heater and sensing electrode. The sensing electrode consists of an interdigitated resistor made of Au or Pt with thickness in the range of 2000 -3000 Å. The gas sensitive layer (SnO 2) is deposited by screen printing or spinning. When heated it react with gas molecules and changes its resistivity, thereby acting as a sensor. The final step involves releasing the sensor, enabling it to be suspended on four bridges, to minimise the dissipation of the heat in the substrate. © 2005 IEEE

Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane

International audienceThis paper reports a high pressure sensor based on a GaN/AlGaN High Electron Mobility Transistor (HEMT) that uses its 375 mm thick sapphire substrate to provide a robust base and enables device operation up to at least 60 bar (6 MPa). Transduction of changes in ambient pressure occurs via piezoelectric and pyroelectric effects on the channel conductance. The HEMTs were strategically placed along an 8 mm2 GaN/AlGaN/GaN/sapphire chip; where the central 4 mm diameter behaves as a pressure sensitive 'drumskin'. The location of peak response lies in the HEMT at the geometric centre of the drumskin, demonstrated by the change in IDS when the pressure was increased from 0 to 60 bar. The response of six strategically placed HEMTs along the chip's surface, were compared to a finite element model to predict sensor behaviour

Pressure and temperature dependence of GaN/AlGaN HEMT based sensors on a sapphire membrane

International audienceThis paper reports a high pressure sensor based on a GaN/AlGaN High Electron Mobility Transistor (HEMT) that uses its 375 μm thick sapphire substrate to provide a robust base and enables device operation up to at least 60 bar (6 MPa). Transduction of changes in ambient pres-sure occurs via piezoelectric and pyroelectric effects on the channel conductance. The HEMTs were strategically placed along an 8 mm2 GaN/AlGaN/GaN/sapphire chip; where the central 4 mm diameter behaves as a pressure sensitive 'drumskin'. The location of peak response lies in the HEMT at the geometric centre of the drumskin, demonstrated by the change in IDS when the pressure was increased from 0 to 60 bar. The response of six strategi-cally placed HEMTs along the chip's surface, were com-pared to a finite element model to predict sensor behav-iour

Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

International audienceThis work reports the bias and pressure sensitivity of AlGaN/GaN High Electron Mobility Transistors (HEMTs) sensing elements strategically placed on a pressure sensitive diaphragm clamped at its edges. The sensitivity was over 150 times greater in the weak inversion regime than in the strong inversion regime of the HEMT, leading to a drain current change of >38% when a pressure of 50 bar was applied. The sensitivity of the HEMT to pressure followed an exponential dependence from atmospheric pressure up to 80 bar, behaviour explained by the response of the density of a two-dimensional electron gas to pressure induced changes in the HEMT threshold voltage in the weak inversion regime. Finally, it was found that the sensitivity of the HEMT was maximum when it was situated in the middle of the diaphragm, whereas a device mounted over the clamping point showed less than 0.02% change in drain current when pressure change of 50 bar was applied