Electronic Transport of Encapsulated Graphene and WSe₂ Devices Fabricated by Pick-up of Prepatterned hBN

We report high quality graphene and WSe₂ devices encapsulated between two hexagonal boron nitride (hBN) flakes using a pick-up method with etched hBN flakes. Picking up prepatterned hBN flakes to be used as a gate dielectric or mask for other 2D materials opens new possibilities for the design and fabrication of 2D heterostructures. In this Letter, we demonstrate this technique in two ways: first, a dual-gated graphene device that is encapsulated between an hBN substrate and prepatterned hBN strips. The conductance of the graphene device shows pronounced Fabry–Pérot oscillations as a function of carrier density, which implies strong quantum confinement and ballistic transport in the locally gated region. Second, we describe a WSe₂ device encapsulated in hBN with the top hBN patterned as a mask for the channel of a Hall bar. Ionic liquid selectively tunes the carrier density of the contact region of the device, while the hBN mask allows independent tunability of the contact region for low contact resistance. Hall mobility larger than 600 cm²/(V·s) for few-layer p-type WSe₂ at 220 K is measured, the highest mobility of a thin WSe₂ device reported to date. The observations of ballistic transport in graphene and high mobility in WSe₂ confirm pick-up of prepatterned hBN as a versatile technique to fabricate ultraclean devices with high quality contact