Giant Stark effect in the emission of single semiconductor quantum dots

We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500 kV/cm, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy

Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements.

Epitaxial InAs quantum dots grown on GaAs substrate are being used in several applications ranging from quantum communications to solar cells. The growth mechanism of these dots also helps us to explore fundamental aspects of self-organized processes. Here we show that composition and strain profile of the quantum dots can be tuned by controlling in-plane density of the dots over the substrate with the help of substrate-temperature profile. The compositional profile extracted from grazing incidence x-ray measurements show substantial amount of inter-diffusion of Ga and In within the QD as a function of height in the low-density region giving rise to higher variation of lattice parameters. The QDs grown with high in-plane density show much less spread in lattice parameter giving almost flat density of In over the entire height of an average QD and much narrower photoluminescence (PL) line. The results have been verified with three different amounts of In deposition giving systematic variation of the In composition as a function of average quantum dot height and average energy of PL emission.The authors would like to acknowledge the support of Department of Science and Technology (DST) for carrying out synchrotron experiments at Petra III, DESY, Germany through the DST-DESY project and the EPSRC, UK for financial support.This is the final version of the article. It first appeared from NPG via http://dx.doi.org/10.1038/srep1573

Electron nuclear spin interaction in semiconductor quantum dots

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Long-term transmission of entangled photons from a single quantum dot over deployed fiber

Abstract Entangled light sources are considered as core technology for multiple quantum network architectures. Of particular interest are sources that are based on a single quantum system as these offer intrinsic security due to the sub-Poissonian nature of the photon emission process. This is important for applications in quantum communication where multi-pair emission generally compromises performance. A large variety of sources has been developed, but the generated photons remained far from being utilized in established standard fiber networks, mainly due to lack of compatibility with telecommunication wavelengths. In this regard, single semiconductor quantum dots are highly promising photon pair sources as they can be engineered for direct emission at telecom wavelengths. In this work we demonstrate the feasibility of this approach. We report a week-long transmission of polarization-entangled photons from a single InAs/GaAs quantum dot over a metropolitan network fiber. The photons are in the telecommunication O-band, favored for fiber optical communication. We employ a polarization stabilization system overcoming changes of birefringence introduced by 18.23 km of installed fiber. Stable transmission of polarization-encoded entanglement with a high fidelity of 91% is achieved, facilitating the operation of sub-Poissonian quantum light sources over existing fiber networks

Research Data pertaining to "Interference with a Quantum Dot Single-Photon Source and a Laser at Telecom Wavelength"

The file 'dot_spectrum.dat' contains the spectrum of the quantum dot being used, without monochromating filter, as shown in Fig. 1. The file 'dot_cohtime_+1V.dat' contains the Mach Zehnder interference information for the quantum dot line used, under the experimental conditions, shown in Fig. 2(a). The files 'X_cohtime_vs_bias.dat' and 'Xch_cohtime_vs_bias.dat' contain data on the dependence on the neutral (X) and charged (Xch/X*) exciton lines' coherence times with applied bias voltage, as shown in Fig. 2(b). The file 'TPI_data.dat' contains the data for the second-order correlations of co- and cross-polarised dot/laser beams, as shown in Fig. 4.This data supports publication available at http://dx.doi.org/10.1063/1.4931729This work was supported by the EPSRC [grant number EP/G037256/1]

Study of Size, Shape, and Etch pit formation in InAs/InP Droplet Epitaxy Quantum Dots

We investigated metal-organic vapor phase epitaxy grown droplet epitaxy (DE) and Stranski–Krastanov (SK) InAs/InP quantum dots (QDs) by cross-sectional scanning tunneling microscopy (X-STM). We present an atomic-scale comparison of structural characteristics of QDs grown by both growth methods proving that the DE yields more uniform and shape symmetric QDs. Both DE and SKQDs are found to be truncated pyramid-shaped with a large and sharp top facet. We report the formation of localized etch pits for the first time in InAs/InP DEQDs with atomic resolution. We discuss the droplet etching mechanism in detail to understand the formation of etch pits underneath the DEQDs. A summary of the effect of etch pit size and position on fine structure splitting (FSS) is provided via the k · p theory. Finite element (FE) simulations are performed to fit the experimental outward relaxation and lattice constant profiles of the cleaved QDs. The composition of QDs is estimated to be pure InAs obtained by combining both FE simulations and X-STM results. The preferential formation of {136} and {122} side facets was observed for the DEQDs. The formation of a DE wetting layer from As-P surface exchange is compared with the standard SKQDs wetting layer. The detailed structural characterization performed in this work provides valuable feedback for further growth optimization to obtain QDs with even lower FSS for applications in quantum technology

Enhanced indistinguishability of in-plane single photons by resonance fluorescence on an integrated quantum dot

Integrated quantum light sources in photonic circuits are envisaged as the building blocks of future on-chip architectures for quantum logic operations. While semiconductor quantum dots have been proven to be the highly efficient emitters of quantum light, their interaction with the host material induces spectral decoherence, which decreases the indistinguishability of the emitted photons and limits their functionality. Here, we show that the indistinguishability of in-plane photons can be greatly enhanced by performing resonance fluorescence on a quantum dot coupled to a photonic crystal waveguide. We find that the resonant optical excitation of an exciton state induces an increase in the emitted single-photon coherence by a factor of 15. Two-photon interference experiments reveal a visibility of 0.80 ± 0.03, which is in good agreement with our theoretical model. Combined with the high in-plane light-injection efficiency of photonic crystal waveguides, our results pave the way for the use of this system for the on-chip generation and transmission of highly indistinguishable photons. We acknowledge the support from the Marie Curie Actions within the Seventh Framework Programme for Research of the European Commission, under the Initial Training Network PICQUE (Grant No. 608062). The Engineering and Physical Sciences Research Council (EPSRC) partly funded the molecular beam epitaxy machine used to grow the sample