Ferromagnetic one dimensional Ti atomic chain

Using the full potential linearized augmented plane wave (FLAPW) method, we have explored the magnetic properties of one dimensional (1D) Ti atomic chain. Astonishingly, we for the first time observed that the 1D Ti atomic chain has ferromagnetic ground state even on NiAl(110) surface although the Ti has no magnetic moment in bulk or macroscopic state. It was found that the physical property of direct exchange interaction among Ti atoms occurred in free standing state is well preserved on NiAl(110) surface and this feature has an essential role in ferromagnetism of 1D Ti atomic chain. It was shown that the m=$|2|$ state has the largest contribution to the magnetic moment of Ti atom grown on NiAl(110) surface. In addition, we found that the magnetic dipole interaction is a key factor in the study of magnetic anisotropy, not the magnetocrystalline anisotropy arising from spin-orbit interaction

Bias Voltage and Temperature Dependence of Hot Electron Magnetotransport

We present a qualitative model study of energy and temperature dependence of hot electron magnetotransport. This model calculations are based on a simple argument that the inelastic scattering strength of hot electrons is strongly spin and energy dependent in the ferromagnets. Since there is no clear experimental data to compare with this model calculations, we are not able to extract clear physics from this model calculations. However, interestingly this calculations display that the magnetocurrent increases with bias voltage showing high magnetocurrent if spin dependent imaginary part of proper self energy effect has a substantial contribution to the hot electron magnetotransport. Along with that, the hot electron magnetotransport is strongly influence by the hot electron spin polarization at finite temperatures

Hot Electron Magnetotransport in a Spin-Valve Transistor at Finite temperatures

The hot electron magnetotransport in a spin-valve transistor has been theoretically explored at finite temperatures. We have explored the parallel and anti-parallel collector current changing the relative spin orientation of the ferromagnetic layers at finite temperatures. In this model calculations, hot electron energy redistribution due to spatial inhomogeneity of Schottky barrier heights and hot electron spin polarization in the ferromagnetic layer at finite temperatures have been taken into account. The results of this model calculations accord with the experimental data semi-quantitative manner. We therefore suggest that both effects remarked above should be taken into account substantially when one explores the hot electron magnetotransport in a spin-valve system transistor at finite temperatures.Comment: p pages, 3 figure

The Contribution of Hot Electron Spin Polarization to the Magnetotransport in a Spin-Valve Transistor at Finite Temperatures

The effect of spin mixing due to thermal spin waves and temperature dependence of hot electron spin polarization to the collector current in a spin-valve transistor has been theoretically explored. We calculate the collector current as well as the temperature dependence of magnetocurrent at finite temperatures to investigate the relative importance of spin mixing and hot electron spin polarization. In this study the inelastic scattering events in ferromagnetic layers have been taken into account to explore our interests. The theoretical calculations suggest that the temperature dependence of hot electron spin polarization has substantial contribution to the magnetotransport in the spin-valve transistor.Comment: 8 pages and 6 figure

Localization lengths of ultrathin disordered gold and silver nanowires

The localization lengths of ultrathin disordered Au and Ag nanowires are estimated by calculating the wire conductances as functions of wire lengths. We study Ag and Au monoatomic linear chains, and thicker Ag wires with very small cross sections. For the monoatomic chains we consider two types of disorder: bounded random fluctuations of the interatomic distances, and the presence of random substitutional impurities. The effect of impurity atoms on the nanowire conductance is much stronger. Our results show that electrical transport in ultrathin disordered wires may occur in the strong localization regime, and with relatively small amounts of disorder the localization lengths may be rather small. The localization length dependence on wire thickness is investigated for Ag nanowires with different impurity concentrations.Comment: 6 pages, postscript figures included, submitted to PR

Graphene Induced High Thermoelectric Performance in ZnO/Graphene Heterostructure

Abstract Despite the low thermoelectric (TE) efficiency of graphene, its flexibility features are attractive for flexible and wearable next‐generation thermoelectric applications. So, it will be highly desirable to synthesize graphene‐based high TE material. Hence, the possibility of significant enhancement of the TE performance in ZnO/graphene heterostructure is investigated. The ZnO monolayer has a direct band gap of 3.3 eV, while a band gap of 5 meV in the ZnO/graphene heterostructure is found. The highest ZT ≈ 2.4 in the n‐doped ZnO/graphene heterostructure at 500 K is obtained, whereas the ZnO monolayer shows ZT ≈ 1.3 at 700 K. Particularly, this giant ZT in the ZnO/graphene heterostructure is found even at a low carrier concentration (≈1011 carrier cm−2). Besides, the ZnO/graphene heterostructure also displays a ZT ≈ 0.8 even at 300 K with a very low carrier concentration (≈1010 carrier cm−2). This outstanding TE performance originates from the TE coefficient advantages of each layer; high electrical conductivity from graphene and high Seebeck coefficient from ZnO incorporate with reduced thermal conductivity in the heterostructure. The findings will stimulate further studies to confirm the results as well as the development of flexible TE generators based on graphene for Internet of things thermoelectric applications