Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement of the PL intensity (up to 689%). The effect of thickness, annealing temperature, annealing duration and precursor purge time on the PL intensity of ALD Al2O3 films was investigated. In order to investigate the penetration depth and passivation effect in porous SiC, the samples were characterized by X-ray photoelectron spectroscopy (XPS) and time-resolved PL. The optimized passivation conditions (20 nm Al2O3 deposited at 160 °C with purge time of 20 s, followed by an annealing for 5 min at 350 °C) for porous SiC were achieved and the results indicate that surface passivation by ALD Al2O3 thin films is a very effective method to enhance the luminescence efficiency of porous SiC

Laser-driven multi-MeV high-purity proton acceleration via anisotropic ambipolar expansion of micron-scale hydrogen clusters

強力なレーザーを使ってエネルギーがそろった純度100％の陽子ビーム発生に成功 --レーザー駆動陽子ビーム加速器の実現へ向けて大きく前進--. 京都大学プレスリリース. 2022-10-13.Multi-MeV high-purity proton acceleration by using a hydrogen cluster target irradiated with repetitive, relativistic intensity laser pulses has been demonstrated. Statistical analysis of hundreds of data sets highlights the existence of markedly high energy protons produced from the laser-irradiated clusters with micron-scale diameters. The spatial distribution of the accelerated protons is found to be anisotropic, where the higher energy protons are preferentially accelerated along the laser propagation direction due to the relativistic effect. These features are supported by three-dimensional (3D) particle-in-cell (PIC) simulations, which show that directional, higher energy protons are generated via the anisotropic ambipolar expansion of the micron-scale clusters. The number of protons accelerating along the laser propagation direction is found to be as high as 1.6 ±0.3 × 10⁹/MeV/sr/shot with an energy of 2.8 ±1.9 MeV, indicating that laser-driven proton acceleration using the micron-scale hydrogen clusters is promising as a compact, repetitive, multi-MeV high-purity proton source for various applications

Surface-sensitive measurements of excitonic processes in rare gas clusters by electron energy loss spectroscopy

We present the electron energy loss spectra of Ar clusters as a function of cluster size ranging from 120 to 3500 atoms/cluster. The intensity of the bulk excitation peak decreases for cluster sizes larger than 500 atoms/cluster. This characteristic feature can be explained based on a simple calculation that takes into account the mean free path of the incident electrons. The present study demonstrates the promise of surface-sensitive measurements of the excitation processes of clusters

Correction method for the energy spectrum of laser-accelerated protons measured by CR-39 track detectors with stepwise energy filters

A combination of CR-39 track detectors and a stepwise energy filter is a simple method to measure the energy spectrum of laser-accelerated protons. The number of etch pits in each area of the CR-39 detector is expected to represent the energy spectrum because the different thicknesses of the filters result in different areas into which the energy reaches in CR-39. However, the higher energy regions may overlap depending on the sensitivity of CR-39. To avoid overlapping, i.e., overestimation of the number of etch pits for each energy region, a correction method for the energy spectrum from the number of etch pits was developed. Based on the calculation results of the reaching energy values and incident energy ranges for CR-39, etch pits are selected that should be counted in each area. CR-39 with stepwise energy lters provides a corrected energy spectrum of laser-accelerated protons by applying the developed method