The longlived charged massive scalar field in the higher-dimensional Reissner--Nordstr\"{o}m spacetime

The quasinormal resonance frequency of the higher-dimensional Reissner--Nordstr\"{o}m (RN) black hole due to charged massive scalar field perturbation is deduced analytically in the eikonal regime. The characteristic decay timescale of the charged massive scalar perturbation in the background of the higher-dimensional RN spacetime is then obtained. The result reveals that longlived charged massive scalar field can exist in higher-dimensional RN spacetime under a certain condition.Comment: 6 pages, 1 figur

Designing isoelectronic counterparts to layered group V semiconductors

In analogy to III-V compounds, which have significantly broadened the scope of group IV semiconductors, we propose IV-VI compounds as isoelectronic counterparts to layered group V semiconductors. Using {\em ab initio} density functional theory, we study yet unrealized structural phases of silicon mono-sulfide (SiS). We find the black-phosphorus-like $\alpha$-SiS to be almost equally stable as the blue-phosphorus-like $\beta$-SiS. Both $\alpha$-SiS and $\beta$-SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds.Comment: 7 pages, 5 figure