1 research outputs found
Solution-Processed Ga<sub>2</sub>O<sub>3</sub> Films via Thermal Annealing for Solar Blind Ultraviolet Photovoltaic Photodetectors with High Photoresponsivity and Fast Response
In
this work, a strategy that enhances the decomposition of organic
compounds and suppresses oxygen defects in solution-processed Ga2O3 films is proposed to fabricate high-performance
Ga2O3 solar blind ultraviolet (SBUV) photodetectors.
The photodetector based on the Ga2O3 film annealed
at 800 °C exhibits a high response of ∼17 ms and a high
photoresponsivity of ∼15.4 mA/W at a 0 V bias. Through a comparison
of the photoelectric properties among the detectors fabricated on
the films annealed at high temperature (800 °C) and low temperature
(500 or 600 °C), the device based on the Ga2O3 film annealed at higher temperature presents higher photoresponsivity
and faster response. The improvement in device performance can be
attributed to the decrease in the concentration of organic matter
and the density of oxygen defects in the Ga2O3 photosensitive layer after high-temperature annealing. The method
proposed in this work can give reference to the fabrication of high-responsivity
and fast-response SBUV detectors based on solution-processed films