A breakdown voltage model for implanted resurf p-LDMOS device on n+ buried layer

This paper presents an analytical expression of the breakdown voltage of a high voltage implanted RESURF p-LDMOS device which uses the n+ buried layer as an effective device substrate. In this model, the doping profile of the buried layer is considered and discussed. The implant dose for the drift region to implement the RESURF principle is also described by this model. Results calculated from this model are verified by experimental values

A q-analog of the Seidel generation of Genocchi numbers

A new $q$-analog of Genocchi numbers is introduced through a q-analog of Seidel's triangle associated to Genocchi numbers. It is then shown that these $q$-Genocchi numbers have interesting combinatorial interpretations in the classical models for Genocchi numbers such as alternating pistols, alternating permutations, non intersecting lattice paths and skew Young tableaux.Comment: 17 page