Systematic investigation of electrical contact barriers between different electrode metals and layered GeSe

For electronic and photoelectronic devices based on GeSe, an emergent two dimensional monochalcogenide with many exciting properties predicted, good electrical contacts are of great importance for achieving high device performances and exploring the intrinsic physics of GeSe. In this article, we use temperature-dependent transport measurements and thermionic emission theory to systematic investigate the contact-barrier heights between GeSe and six common electrode metals, Al, Ag, Ti, Au, Pt and Pd. These metals cover a wide range of work functions (from ~ 3.6 eV to ~ 5.7 eV). Our study indicates that Au forms the best contact to the valence band of GeSe, even though Au does not possess the highest work function among the metals studied. This behavior clearly deviates from the expectation of Schottky-Mott theory and indicates the importance of the details at the interfaces between metals and GeSe.Comment: 10 pages, 4 figure

Lateral heterostructures formed by thermally converting n-type SnSe2 to p-type SnSe

Different two-dimensional materials, when combined together to form heterostructures, can exhibit exciting properties that do not exist in individual components. Therefore, intensive research efforts have been devoted to their fabrication and characterization. Previously, vertical and in-plane two-dimensional heterostructures have been formed by mechanical stacking and chemical vapor deposition. Here we report a new material system that can form in-plane p-n junctions by thermal conversion of n-type SnSe2 to p-type SnSe. Through scanning tunneling microscopy and density functional theory studies, we find that these two distinctively different lattices can form atomically sharp interfaces and have a type II to nearly type III band alignment. We also demonstrate that this method can be used to create micron sized in-plane p-n junctions at predefined locations. These findings pave the way for further exploration of the intriguing properties of the SnSe2-SnSe heterostructure.Comment: 30 pages, 6 figure

Chemical Potential and Quantum Hall Ferromagnetism in Bilayer Graphene

Bilayer graphene has a unique electronic structure influenced by a complex interplay between various degrees of freedom. We probe its chemical potential using double bilayer graphene heterostructures, separated by a hexagonal boron nitride dielectric. The chemical potential has a non-linear carrier density dependence, and bears signatures of electron-electron interactions. The data allow a direct measurement of the electric field-induced bandgap at zero magnetic field, the orbital Landau level (LLs) energies, and the broken symmetry quantum Hall state gaps at high magnetic fields. We observe spin-to-valley polarized transitions for all half-filled LLs, as well as emerging phases at filling factors \nu = 0 and \nu = +-2. Furthermore, the data reveal interaction-driven negative compressibility and electron-hole asymmetry in N = 0, 1 LLs.Comment: 21 pages, 4 figures; supplementary material includes four figures, and one tabl

Long wavelength local density of states oscillations near graphene step edges

Using scanning tunneling microscopy and spectroscopy, we have studied the local density of states (LDOS) of graphene over step edges in boron nitride. Long wavelength oscillations in the LDOS are observed with maxima parallel to the step edge. Their wavelength and amplitude are controlled by the energy of the quasiparticles allowing a direct probe of the graphene dispersion relation. We also observe a faster decay of the LDOS oscillations away from the step edge than in conventional metals. This is due to the chiral nature of the Dirac fermions in graphene.Comment: 5 pages, 4 figures, to appear in Phys. Rev. Let

Global Weinstein Type Theorem on Multiple Rotating Periodic Solutions for Hamiltonian Systems

This paper concerns the existence of multiple rotating periodic solutions for $2n$ dimensional convex Hamiltonian systems. For the symplectic orthogonal matrix $Q$, the rotating periodic solution has the form of $z(t+T)=Qz(t)$, which might be periodic, anti-periodic, subharmonic or quasi-periodic according to the structure of $Q$. It is proved that there exist at least $n$ geometrically distinct rotating periodic solutions on a given convex energy surface under a pinched condition, so our result corresponds to the well known Ekeland and Lasry's theorem on periodic solutions. It seems that this is the first attempt to solve the symmetric quasi-periodic problem on the global energy surface. In order to prove the result, we introduce a new index on rotating periodic orbits.Comment: arXiv admin note: text overlap with arXiv:1812.0583