Local and Nonlocal Optically Induced Transparency Effects in Graphene–Silicon Hybrid Nanophotonic Integrated Circuits

Graphene is well-known as a two-dimensional sheet of carbon atoms arrayed in a honeycomb structure. It has some unique and fascinating properties, which are useful for realizing many optoelectronic devices and applications, including transistors, photodetectors, solar cells, and modulators. To enhance light–graphene interactions and take advantage of its properties, a promising approach is to combine a graphene sheet with optical waveguides, such as silicon nanophotonic wires considered in this paper. Here we report <i>local</i> and <i>nonlocal</i> optically induced transparency (OIT) effects in graphene–silicon hybrid nanophotonic integrated circuits. A low-power, continuous-wave laser is used as the pump light, and the power required for producing the OIT effect is as low as ∼0.1 mW. The corresponding power density is several orders lower than that needed for the previously reported saturated absorption effect in graphene, which implies a mechanism involving light absorption by the silicon and photocarrier transport through the silicon–graphene junction. The present OIT effect enables low power, all-optical, broadband control and sensing, modulation and switching <i>locally</i> and <i>nonlocally</i>

Low-loss multilevel operation using lossy PCM-integrated silicon photonics

Chalcogenide phase-change materials (PCMs) offer new paradigms for programmable photonic integrated circuits (PICs) thanks to their zero static energy and significant refractive index contrast. However, prototypical PCMs, such as GeSbTe (GST), are lossy in their crystalline phase, albeit transparent in the amorphous state. Moreover, electrically switching PCMs to intermediate states is a stochastic process, limiting programming accuracy. As a result, achieving both low-loss and deterministic multi-level operation with GST remains challenging. Although low-loss PCMs, such as Sb2S3 and Sb2Se3, have been discovered in recent years, they are much less technologically mature. In this work, we propose a design with multiple GST segments to overcome the challenge of deterministic multilevel operation. GST segments are individually controlled by interleaved silicon PIN diode heaters in a binary but reliable fashion, and multiple levels are encoded in their phase sequence. A 1 x 1 programmable unit with two unequal GST segments is experimentally demonstrated, showcasing four distinct operation levels and negligible thermal crosstalk with only one pair of metal contacts. We then extend the design to 1 x 2 and 2 x 2 programmable units. For the 2 x 2 programmable unit design, we propose a phase-detuned three-waveguide directional coupler structure to mitigate the absorption and radiation loss, showing < -1.2 dB loss and three splitting ratios. Our work provides a new path toward low-loss and multi-level optical switches using lossy PCMs

Nanocavity Integrated van der Waals Heterostructure Light-Emitting Tunneling Diode

Developing a nanoscale, integrable, and electrically pumped single mode light source is an essential step toward on-chip optical information technologies and sensors. Here, we demonstrate nanocavity enhanced electroluminescence in van der Waals heterostructures (vdWhs) at room temperature. The vertically assembled light-emitting device uses graphene/boron nitride as top and bottom tunneling contacts and monolayer WSe₂ as an active light emitter. By integrating a photonic crystal cavity on top of the vdWh, we observe the electroluminescence is locally enhanced (>4 times) by the nanocavity. The emission at the cavity resonance is single mode and highly linearly polarized (84%) along the cavity mode. By applying voltage pulses, we demonstrate direct modulation of this single mode electroluminescence at a speed of ∼1 MHz, which is faster than most of the planar optoelectronics based on transition metal chalcogenides (TMDCs). Our work shows that cavity integrated vdWhs present a promising nanoscale optoelectronic platform