USE JD-R THEORY TO EXPLORE THE RELATIONSHIP BETWEEN EMPLOYEE EXPERIENCE AND EMPLOYEE ENGAGEMENT—TAKING JOB DEMANDS AS THE MODERATING VARIABLE

Past research has proven that employee experience has a positive impact on employee engagement. Based on the conceptual framework of Job Demands-Resources model (JD-R) model, this study regards efficient employee experience as a job resource to explore the impact of "employee experience" and” job demands” on employee engagement in organizations. Work requirements are further divided into challenge demand and hindrance demand. This study adopts the experimental design of the scenario method and uses two two-factor independent sample designs, namely 2x2(employee experience is high / employee experience is low x challenging job demands is high / challenging job demands is low) and 2x2(employee experience is high / employee experience is low x hindering job demands is high / hindering job demands is low).A total of 176 valid questionnaires were collected. The research results found that when employee experience is high, employee engagement is higher than when employee experience is low. Employee experience and job demands have an interactive effect on employee engagement. When employee experience is high, employee engagement will be higher when challenging job demands are added than when hindering job demands are added. It is expected that the results of this study can help in theoretical and practical application

Effect of Different Deposition Power of In 2

The (In, Ga, Zn)Ox (IGZO) thin films were deposited on glass substrates using cosputtering method in radio frequency magnetron sputtering system. Zn2Ga2O5 (Ga2O3-2 ZnO, GZO) and In2O3 ceramics were used as targets and dual guns were used to deposit the IGZO thin films. Deposition power of GZO target was 80 W and deposition power of pure In2O3 target was changed from 70 W to 100 W, and the deposition time was 30 min. The effect of deposition power of In2O3 target on the crystalline, surface, electrical, and optical properties of the IGZO thin films was investigated at room temperature in a pure Ar atmosphere. The cosputtered IGZO thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition power of In2O3 target due to the room temperature sputtering process. However, the cosputtered IGZO thin films exhibited transparent electrode properties because they had high transmittance ratio and low resistivity. The value variations in the optical band gap (Eg) values of the IGZO thin film were evaluated from the plots of (αhν)2=c(hν-Eg). We would also show that the deposition power of In2O3 target would have a large effect on mobility and Eg value of the IGZO thin films

Texture-Etched SnO 2

Transparent electrodes of tin dioxide (SnO2) on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2

Fabrication and Characterization of SiC:H/c-SiHeterojunction Solar Cells Using Hot-wire CVD

矽異質接面太陽電池因同時具備低成本與高效能的特點而受到重視，為了追求更高的光線轉換效率，可嘗試提升此元件窗口層的光學能隙。有鑑於以上目標，本研究利用熱燈絲化學氣相沉積法，在SiH4、B2H6、H2和CH4等工作氣體的反應下，製備嵌入(embedded)奈米晶矽的寬能隙硼摻雜碳化矽薄膜，並實際應用於矽異質接面太陽電池入光層。 為確定碳化矽薄膜性能，使用傅立葉轉換紅外光譜儀、X光繞射分析儀、X射線光電子能譜儀、拉曼光譜儀、場發射掃描式電子顯微鏡、霍爾效應量測以及n&k光學量測系統，對嵌入奈米晶矽的碳化矽薄膜進行材料分析。實驗發現，氫氣的流量分率在薄膜化學組態、微結構與光電特性上，扮演著十分重要的角色。研究結果指出，氫氣流量分率增加可提升矽膜結晶率；膜的碳含量對光學能隙及摻雜濃度具正相關，電阻率和活化能則呈現負相關。除此之外，Si-C也隨膜內含碳量的提高有增強的趨勢，而Si-H反之。 透過優化的碳化矽薄膜，結合各項製程步驟，開發Al/ITO/p-type Si-NCs:SiC films/intrinsic a-Si:H/n-type c-Si:H/ITO/Ag/Al 結構的矽異質接面太陽電池，成功製作開路電壓為520mV、短路電流密度42.5 mA/cm2，效率達14.50%的光轉換元件。Silicon heterojunction solar cell (Si-HJ) is one of the most promising structures with low cost and high conversional efficiency. In this kind of cell, a window layer with wide optical band gap characteristic is demanded. In this study, wide band gap boron-doped Si nanocrystals embedded in silicon carbide films (Si-NCs:SiC) were prepared by hot-wire chemical vapor deposition for Si-HJ window layer applications. The SiH4, B2H6, H2 and CH4 were used as source gas. The material properties of the prepared Si-NCs:SiC films were characterized by Fourier-transform infrared spectrometer, X-ray diffractormeter, X-ray photoelectron spectrometer, Raman spectrometer, field emission scanning electronic microscopy, Hall and n&k analyzer. The experimental results indicate that the H2 flow ratio plays an important role in the chemical composition, microstructure, optical and electronic properties of the Si-NCs:SiC films. It was found that the crystalline fraction of Si-NCs:SiC films increased with the increasing of H2 flow ratio. The optical band gap and doping concentration show the positively correlation, while the resistivity and active energy show the negatively correlation with the carbon contents of the Si-NCs:SiC films. The enhancement in Si-C stretching mode and opposite the Si-H wagging mode as the carbon contents of the Si-NCs:SiC films were increased. After the optimization of p-type Si-NCs:SiC deposition parameters, we fabricated the Si-HJ with structures of Al/ITO/p-type Si-NCs:SiC films/intrinsic a-Si:H/n-type c-Si:H/ITO/Ag/Al and characterized the cell performance. Finally, the Si-HJ cell with conversion efficiency of 14.50 %, open-circuit voltage of 520 mV, and short-circle current density of 42.5 mA/cm2 was achieved.誌謝 i 摘要 ii Abstract iii 目錄 iv 表目錄 vii 圖目錄 viii 第一章 緒論 1 1-1 前言 1 1-1-1 能源危機與溫室災難 1 1-1-2 太陽電池演化歷程 2 1-1-3 太陽電池的效率與成本 3 1-1-4 太陽電池發電的優缺點 4 1-2 研究動機 5 第二章 理論基礎與文獻回顧 7 2-1 太陽能源 7 2-2 太陽電池原理 8 2-2-1 半導體的光吸收與吸收係數 8 2-2-2 光伏效應與PN接面太陽電池 10 2-3 太陽電池等效電路與效率計算 13 2-3-1 短路電流與開路電壓 14 2-3-2 並聯電阻與串聯電阻 14 2-3-3 太陽電池效率計算 15 2-4 熱燈絲化學氣相沉積法 16 2-4-1 氣相沉積理論 16 2-4-2 化學氣相薄膜沉積機制 18 2-4-3 熱燈絲化學氣相沉積機制原理 21 2-4-4 氫氣對HWCVD沉積矽膜的影響 26 2-5 矽異質接面太陽電池 27 2-5-1 矽異質接面太陽電池簡介 27 2-5-2 以碳化矽(SiC)做為HJPV入光層材料 28 第三章 研究方法 30 3-1 實驗基板與前置處理 30 3-2 沉積系統與薄膜製備 31 3-2-1 沉積系統簡介 31 3-2-2 薄膜製備 32 3-3 元件製作 33 3-3-1 鹼蝕刻表面粗化(texture) 33 3-3-2 氫處理 33 3-3-3 沉積矽膜 34 3-3-4 正背面ITO與金屬電極 35 3-3-5 氧電漿邊緣處理 36 3-4 膜質分析與元件檢測 37 3-4-1 表面形貌量測儀(α-step) 37 3-4-2 n&k光學量測系統 37 3-4-3 光學霧度計(Haze) 38 3-4-4 太陽電池模擬光源量測系統 38 3-4-5 光暗電導率量測 39 3-4-6 活化能(Ea)量測 40 3-4-7 霍爾（Hall）效應量測 40 3-4-8 場發射掃瞄式電子顯微鏡(FE-SEM) 41 3-4-9 高解析穿透式電子顯微鏡(HR-TEM) 41 3-4-10 拉曼光譜儀(Raman spectroscopy) 42 3-4-11 X射線光電子能譜儀(XPS) 43 3-4-12 X光繞射分析儀(XRD) 45 3-4-13 傅立葉轉換紅外光譜儀(FTIR) 45 第四章 結果與討論 47 4-1 p型氫化碳化矽薄膜分析 48 4-1-1 p型氫化碳化矽薄膜鍍率分析 48 4-1-2 p型氫化碳化矽薄膜光性分析 49 4-1-3 p型氫化碳化矽薄膜電性分析 52 4-1-4 p型氫化碳化矽薄膜微結構分析 57 4-1-5 p型氫化碳化矽薄膜化學組態分析 61 4-2 元件檢測 67 4-2-1 表面粗化分析 67 4-2-2 本質矽膜分析 68 4-2-3 ITO透明導電膜分析 69 4-2-4 金屬電極分析 70 4-2-5 元件檢測分析 71 4-2-6 邊緣處理與電子顯微鏡下的結構分析 73 第五章 結論與未來工作 76 參考文獻 7

Purification and Identification of an ACE-Inhibitory Peptide from Gracilaria tenuistipitata Protein Hydrolysates

Edible marine species are valuable sources of bioactive peptides. This study investigated the ACE-inhibitory activity of protein hydrolysates from the red algae Gracilaria tenuistipitata. Fifteen groups of protein hydrolysates were prepared by a two-step enzymatic hydrolysis of G. tenuistipitata: initial hydrolysis with several glycolytic enzymes, followed by three separate proteolytic reactions (Alcalase, Neutrase and Flavourzyme) for 2–10 h. Results showed that the hydrolysate GTN4H had the highest ACE-inhibitory activity in vitro. Furthermore, oral administration of GTN4H significantly reduced systolic blood pressure in spontaneously hypertensive rats. Fraction A derived from GTN4H displayed the highest ACE-inhibitory activity among fractions. Further purification of fraction A by RP-HPLC obtained a purified peptide (MW: 1776 Da) with 17 amino acids and 95.4% ACE-inhibitory activity

Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power

Re-Evaluating the Protective Effect of Hemodialysis Catheter Locking Solutions in Hemodialysis Patients

Catheter-related bloodstream infections (CRBSIs) and exit-site infections (ESIs) are common complications associated with the use of central venous catheters for hemodialysis. The aim of this study was to analyze the impact of routine locking solutions on the incidence of CRBSI and ESI, in preserving catheter function, and on the rate of all-cause mortality in patients undergoing hemodialysis. We selected publications (from inception until July 2018) with studies comparing locking solutions for hemodialysis catheters used in patients undergoing hemodialysis. A total of 21 eligible studies were included, with a total of 4832 patients and 318,769 days of catheter use. The incidence of CRBSI and ESI was significantly lower in the treated group (citrate-based regimen) than in the controls (heparin-based regimen). No significant difference in preserving catheter function and all-cause mortality was found between the two groups. Our findings demonstrated that routine locking solutions for hemodialysis catheters effectively reduce the incidence of CRBSIs and ESIs, but our findings failed to show a benefit for preserving catheter function and mortality rates. Therefore, further studies are urgently needed to conclusively evaluate the impact of routine locking solutions on preserving catheter function and improving the rates of all-cause mortality