Simultaneous PIXE and RBS data analysis using Bayesian Inference with the DataFurnace code

The Rutherford Backscattering Spectroscopy (RBS) and Particle Induced X-ray Emission (PIXE) techniques can be used to obtain complementary information about the characteristics of a sample but, traditionally, a gap has separated the available computer codes for analyzing data from each technique, being hard to simultaneously analyze data from the same sample. The recent development of a free and open source library, LibCPIXE, for PIXE simulation and analysis of arbitrary multilayered samples, has permitted to integrate this technique into the DataFurnace code which already handles many other IBA techniques such as Rutherford and non-Rutherford backscattering, elastic recoil detection, and non-resonant nuclear reaction analysis. The fitting capabilities of DataFurnace can therefore now be applied to PIXE spectra as well, including the Bayesian Inference analysis and the simultaneous and coherent fitting of multiple spectra from different techniques. Various examples are presented in which the simultaneous RBS and PIXE analysis allows us to obtain consistent results that cannot be obtained by independent analysis of the data from each technique.Comment: 10 pages, 5 figures. Paper initially presented to IBA2005. Please cite the published version (DOI:10.1016/j.nimb.2006.03.190

Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition

The time evolution of self-assembled Ge islands, during low-pressure chemical vapor deposition (LPCVD) of Ge on Si at 650 Deg C using high growth rates, has been investigated by atomic force microscopy, transmission electron microscopy, and Rutherford backscattering spectrometry. We have found three different island structures The smallest islands are "lens-shaped" and characterized by a rather narrow size distribution, ~4nm high and ~20nm wide. Next to form are a distinct population of multifaceted "dome shaped" islands, up to 25nm high and 80-150 nm wide. Finally, the largest islands that form are square-based truncated pyramids with a very narrow size distribution ~50nm high and ~250nm wide. The pyramidal islands normally seen in the intermediate size range (~150nm) are not observed. The small lens-shaped islands appear to be defect free, while some of the multifaceted islands as well as all the large truncated pyramids contain misfit dislocations. The existence of multifaceted islands, in the size range where multifaceted "dome shaped" islands have previously been reported, is attributed to the high growth rate used. Furthermore, under the growth conditions used, the truncated-pyramid-shaped islands are characterized by a very narrow size distribution

Ion Beam Methods, Introduction

Ion beam techniques are used with ion energies from eV to many MeV and a very wide range of ion species to characterise materials at length scales from sub-nm to sub-mm and in a wide variety of different ways. Many of these techniques are non destructive. Atomic concentration can be determined from matrix elements (the stoichiometry) to minor and trace elements (at ng/g sensitivity and better), in one dimension (depth profiles), two dimensions (elemental maps), and three dimensions with full tomography being feasible. There is sensitivity to the whole Periodic Table one way or another, with nuclear techniques for isotopic sensitivity, and high resolution mass spectrometry for obtaining isotopic ratios at ultra-high sensitivities of 1014 and better. Other techniques include ultra-high resolution microscopy, characterisation of semiconductor device defects at high spacial resolution, and the investigation of damage processes in the nuclear irradiation of materials. ION BEAM METHODS for thin film materials have major application areas from archaeology to zoology (including materials science, geology, cultural heritage, electronics and many others)

Josephson effects in MgB2 meta masked ion damage junctions

Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.Comment: 12 pages, 4 figures, RevTeX4, submitted to AP

Ab Initio Thermodynamics Calculation of Beta Decay Rates

Beta‐decay half‐lives for the free neutron, for ⁶He and ⁸He, and for ⁸Li are calculated ab initio from geometrical thermodynamics arguments, independently of any quantum mechanics. Half‐lives for the decay of ⁸Be to two alphas and for the disintegration of the tetraneutron are also calculated. The calculated values are close to those experimentally observed

A Maximum Entropy Resolution to the Wine/Water Paradox.

The Principle of Indifference ('PI': the simplest non-informative prior in Bayesian probability) has been shown to lead to paradoxes since Bertrand (1889). Von Mises (1928) introduced the 'Wine/Water Paradox' as a resonant example of a 'Bertrand paradox', which has been presented as demonstrating that the PI must be rejected. We now resolve these paradoxes using a Maximum Entropy (MaxEnt) treatment of the PI that also includes information provided by Benford's 'Law of Anomalous Numbers' (1938). We show that the PI should be understood to represent a family of informationally identical MaxEnt solutions, each solution being identified with its own explicitly justified boundary condition. In particular, our solution to the Wine/Water Paradox exploits Benford's Law to construct a non-uniform distribution representing the universal constraint of scale invariance, which is a physical consequence of the Second Law of Thermodynamics

Electrical properties of Bi-implanted amorphous chalcogenide films

The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.Comment: This is an extended version of the results presented in Proc. SPIE 8982, 898213 (2014

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×10 exp 12 cm exp−2 and 4×10 exp 14 cm exp−2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1×10 exp 13 cm exp −2 and a fluence of 1×10 exp 14 cm exp -2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200–400 °C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.Peer reviewe