2D and 3D cubic monocrystalline and polycrystalline materials: their stability and mechanical properties

We consider 2- and 3-dimensional cubic monocrystalline and polycrystalline materials. Expressions for Young's and shear moduli and Poisson's ratio are expressed in terms of eigenvalues of the stiffness tensor. Such a form is well suited for studying properties of these mechanical characteristics on sides of the stability triangles. For crystalline high-symmetry directions lines of vanishing Poisson's ratio are found. These lines demarcate regions of the stability triangle into areas of various auxeticity properties. The simplest model of polycrystalline 2D and 3D cubic materials is considered. In polycrystalline phases the region of complete auxetics is larger than for monocrystalline materials.Comment: 9 pages, 3 figures, in proceedings of the Tenth International School on Theoretical Physics, Symmetry and Structural Properties of Condensed Matter, Myczkowce 200

Piezoelectric response to coherent longitudinal and transverse acoustic phonons in a semiconductor Schottky diode

We study the generation of microwave electronic signals by pumping a (311) GaAs Schottky diode with compressive and shear acoustic phonons, generated by femtosecond optical excitation of an Al _lm transducer and mode conversion at the Al-GaAs interface. They propagate through the substrate and arrive at the Schottky device on the opposite surface, where they induce a microwave electronic signal. The arrival time, amplitude and polarity of the signals depend on the phonon mode. A theoretical analysis is made of the polarity of the experimental signals. This includes the piezoelectric and deformation potential mechanisms of electron-phonon interaction in a Schottky contact and shows that the piezoelectric mechanism is dominant for both transverse and longitudinal modes with frequencies below 250 GHz and 70 GHz respectively

Phonon Images of Crystals for Different Sources

The focusing patterns for energy and quasi-momentum are obtained for different types of phonon sources. We considered point and extended (Gaussian) sources and sources of monochromatic and Planckian phonons

Magnetic Field Dependence of Phonon-Induced Drag Current of 2D Carriers

The magnetic field dependence of the drag current induced by beams of acoustic phonons is studied in a 2D gas of carriers, formed in a heterostructure. This drag current is related to the velocity of the center of mass of the gas. The elimination of the degrees of freedom related to the relative motion of the carriers leads to a Langevin equation for the center-of-mass position vector. From this equation one can obtain an expression for the induced current density which depends on carrier density-density correlation functions. An explicit formula for the time-integrated current density is derived taking into account all intra and inter Landau level transitions. Corresponding numerical results are in good agreement with the experimental patterns

Images of the Response Signal of a 2D Gas of Carriers to a Pulsed Beam of 3D Phonons

The patterns for the time integrated drag current induced by a pulsed beam of bulk phonons in a 2D gas of charge carriers are calculated. A beam of Planckian phonons propagates in a GaAs crystal. We considered a 2D gas of electrons lying in a {001} plane and a 2D gas of holes lying in the {311} plane. Planckian phonons are radiated by an extended (Gaussian) source

Phonon Induced Drag of Charge Carriers in Heterostructures in Magnetic Fields: Limit of Weak Fields

The response of a 2D gas of charge carriers of mobility μ in magnetic field B to pulsed phonon beams is considered. Previously we derived a quantum Langevin equation for the centre-of-mass of the carrier gas, which allows us to calculate the time integrated drag current. This formula is studied in the weak magnetic field limit. When the ratio of the cyclotron frequency ω$\text{}_{c}$ to the frequency ω of phonons is small and μB ≪ 1, the general formula coincides with the corresponding expression obtained in the frame of the Boltzmann equation with the collision integral independent of B