Media 1: Simple holographic projection in color

Originally published in Optics Express on 22 October 2012 (oe-20-22-25130

Terahertz Imaging with GaAs and GaN Plasma Field Effect Transistors Detectors

International audienceAn overview of recent results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular, the research on the dynamic range of these detectors is described and two different technologies GaAs and GaN are compared. As a conclusion, we will show first real world applications of the plasma field effect transistors based THz detectors: demonstrators of the imagers (cameras and linear scanners) developed for fast postal security and for nondestructive industrial quality control

3-D-Printed Flat Optics for THz Linear Scanners

THz beam shaping via a single diffractive optical element is used to convert a divergent beam into a focal line segment perpendicular to the optical axis. The novel structure was designed for narrowband applications as a kinoform element and we successfully applied it in active, high-speed, THz linear scanners. The theoretical approach and experimental results are presented