14 research outputs found
Unexpected properties of the inductively coupled plasma induced defect in germanium
Inductively coupled plasma (ICP) etching of germanium introduces a single defect, the E0.31 electron trap, for a
large range of argon partial pressures from 4 × 10-3 to 6.5 × 10-4mbar that correspond to ion energies of 8 to 60
eV. Ge of three crystallographic orientations, (100), (110) and (111), treated with 20 and 60 eV ICP had defect
concentration profiles that were similar in appearance, with a maximum concentration of 1014 cm-3 extending
more than a μm into the material, approximately three orders of magnitude deeper than what TRIM simulations
predicted. All profiles were measured using Laplace deep level transient spectroscopy (L-DLTS), a technique
that is sensitive to defect concentrations as low as 1011 cm-3. Isochronal annealing of samples showed
concentration curves broadening after a 400 K anneal and decreasing to the 1013 cm-3 level after a 450 K anneal.
Unannealed samples measured after a year exhibited similar decreases in defect concentration without
broadening of their profiles. A 550 K anneal lowered the defect concentration to levels below the L-DLTS
detection limit. Thereafter additional plasma treatment of the surface failed to reintroduce this defect indicating
that the structure required for the formation of E0.31 was no longer present in the region under observation.http://www.elsevier.com/locate/physbhb201
Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts
Please read abstract in the article.The National Research Foundation of South Africahttp://www.elsevier.com/locate/mssp2020-08-15hj2020Physic
Observation of low-temperature annealing of a primary defect in gallium nitride
Primary defects were introduced into n-type gallium nitride (GaN) thin films by 1.6 MeV-proton bombardment at 20 K. The electronic states of these defects were investigated by means of optical space charge spectroscopy. An until now unreported primary defect, HP1, with an electronic state close to the valence band edge was detected. HP1 can be photo-ionised with photon energies of 3.4 eV. It was found to be stable up to 235 K but anneals quickly at temperatures above 240 K.National Research Foundation (NRF)http://www.elsevier.com/locate/physbhb201
Electrical characterization of metastable defects introduced in GaN by eu-ion implantation
Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then
annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were
used to characterise the ion implantation induced defects in GaN. Two of the implantation induced
defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that
could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and
0.27 eV below the conduction band, respectively, are two configurations of a metastable defect.
These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias
and temperature conditions, and the transformation processes follow first order kinetics.The South African National
Research Foundation, the Fund for Scientific Research, Flanders (FWO), the Concerted Action of
the KULeuven (GOA/2009/006), the Inter-university Attraction Pole (IAP P6/42) and the Center of
Excellence Programme (INPAC EF/05/005).http://www.ttp.net/0255-5476.htmlhb2016Physic
Inductively coupled plasma induced deep levels in epitaxial n-GaAs
The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Sidoped)GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace
DLTS. Several prominent electron traps (Ec—0.046 eV, Ec—0.186 eV, Ec—0.314 eV. Ec—0.528 eV and Ec—0.605 eV) were detected.The metastable defect Ec—0.046eV having a trap signature similar to E1 is observed for the first time. Ec—0.314eV and Ec—0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.South African National Research Foundationhttp://www.elsevier.com/locate/physbnf201
The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
Please read abstract in the article.National Research Foundation (NRF) of South African (Grant specific unique reference number (UID) 78838).http://www.elsevier.com/locate/mssp2016-11-30hb201
The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes
Please read abstract in the article.The University of Pretoria and the National Research Foundation (NRF) of South Africa, Grant number 98961.http://www.elsevier.com/locate/nimb2018-10-15hj2017Physic
Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H-SiC
Current–voltage, capacitance–voltage and conventional deep level transient spectroscopy at temperature
ranges from 40 to 300 K have been employed to study the influence of alpha-particle irradiation from an
241Am source on Ni/4H–SiC Schottky contacts. The nickel Schottky barrier diodes were resistively evaporated
on n-type 4H–SiC samples of doping density of 7.1 1015 cm 3. It was observed that radiation
damage caused an increase in ideality factors of the samples from 1.04 to 1.07, an increase in Schottky
barrier height from 1.25 to 1.31 eV, an increase in series resistance from 48 to 270 X but a decrease in
saturation current density from 55 to 9 10 12Am 2 from I–V plots at 300 K. The free carrier concentration
of the sample decreased slightly after irradiation. Conventional DLTS showed peaks due to four deep
levels for as-grown and five deep levels after irradiation. The Richardson constant, as determined from a
modified Richardson plot assuming a Gaussian distribution of barrier heights for the as-grown and irradiated
samples were 133 and 151 A cm 2 K 2, respectively. These values are similar to literature values.National Research Foundation (NRF) of South African (Grant specific unique reference number (UID) 78838).http://www.elsevier.com/locate/nimb2016-12-31hb201
Electrical characterization of rare-earth implanted GaN
Please read abstract in articleDeep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of MOCVD grown, europium-(Eu) and xenon-(Xe) implanted GaN films on sapphire substrates. Implantation energy was 80keV with afluence of 1x1014cm-2 along a channeled crystallographic direction. Defect levels were observed at EC 0.19eV for both Eu- and Xe- implantation which were predicted to be a rare-earth related donor level by theoretical calculations. Other defect levels are observed with energy levels located at 0.22,0.68,0.49,0.60,0.77eV and 0.48,0.64,0.45,
0.72eV below the conduction band for Eu and Xe implantation, respectively. Some of these levels have similar defect signatures and can be related to other implantation related defects introduced in erbium, praseodymium and helium implantations
Effect of alpha-particle irradiation on the electrical properties of n-type Ge
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